Abstract:The antiferromagnetic topological insulator has attracted lots of attention recently, as its intrinsic magnetism and topological property makes it a potential material to realize the quantum anomalous Hall effect (QAHE) at relative high temperature. Until now, only MnBi$_2$Te$_4$ is predicted and grown successfully. The other MB$_2$T$_4$-family materials predicted (MB$_2$T$_4$:M=transition-metal or rare-earth element, B=Bi or Sb, T=Te, Se, or S) with not only antiferromagnetic topological property but also rich and exotic topological quantum states and dynamically stable (or metastable) structure have not been realized on experiment completely. Here, MnBi$_2$Te$_4$ single crystals have been grown successfully and tested. It shows typical antiferromagnetic character, with Neel temperature of 24.5K and a spin-flop transition at H$\thickapprox$35000 Oe, 1.8K. After obtaining MnBi$_2$Te$_4$ single crystals, we have tried to synthesize the other members of MB$_2$T$_4$-family materials, but things are not going so well. Then it inspires us to discuss the growth mechanism of MnBi$_2$Te$_4$. The growth mode may be the layer-inserting growth mode based on symmetry, which is supported by our X-ray photoelectron spectroscopy (XPS) measurement. The XPS measurement combing with the $Ar^+$ ion sputtering is done to investigate the chemical state of MnBi$_2$Te$_4$. Binding energies (BE) of the MnBi$_2$Te$_4$-related contributions to Mn2p and Te3d spectra agree well with those of inserting material $\alpha$-MnTe. Rising intensity of the Mn2p satellite for divalent Mn (bound to chalcogen) with atomic number of ligand (from MnO to MnBi$_2$Te$_4$) has been observed, thus suggesting classification of MnBi$_2$Te$_4$ as the charge-transfer compound. Understanding the growth mode of MnBi$_2$Te$_4$ can help us to grow the other members of MB$_2$T$_4$-family materials.

Atomistic Control in Molecular Beam Epitaxy Growth of Intrinsic Magnetic Topological Insulator MnBi2Te4

Investigating and Manipulating the Molecular Beam Epitaxy Growth Kinetics of Intrinsic Magnetic Topological Insulator MnBi2Te4 with in Situ Angle-Resolved Photoemission Spectroscopy

Investigating and manipulating the molecular beam epitaxy growth kinetics of intrinsic magnetic topological insulator MnBi2Te4within situangle-resolved photoemission spectroscopy.

Epitaxial Growth and Structural Characterizations of MnBi2Te4 Thin Films in Nanoscale

Intrinsic and extrinsic dopings in epitaxial films MnBi2Te4

Intrinsic and extrinsic dopings in epitaxial films MnBi<sub>2</sub>Te<sub>4</sub>

Evolution of the electronic structure of ultrathin MnBi2Te4 Films

Experimental Realization of an Intrinsic Magnetic Topological Insulator

Intrinsic magnetic topological insulator phases in the Sb doped MnBi2Te4 bulks and thin flakes

The Layer-inserting Growth of Antiferromagnetic Topological Insulator MnBi$_2$Te$_4$ Based on Symmetry and Its X-ray Photoelectron Spectroscopy

Topological Electronic Structure and Its Temperature Evolution in Antiferromagnetic Topological Insulator MnBi_{2}Te_{4}

Unveiling the Anomalous Hall Response of the Magnetic Structure Changes in the Epitaxial MnBi2Te4 Films.

Topological Insulator Thin Films Of Bi2te3 With Controlled Electronic Structure

Progress on the Antiferromagnetic Topological Insulator MnBi2Te4.

Coexisting Ferromagnetic-antiferromagnetic Phase and Manipulation in Magnetic Topological Insulator MnBi4Te7

Distinguishing Surface and Bulk Electromagnetism via Their Dynamics in an Intrinsic Magnetic Topological Insulator

Atomic-Layer-Controlled Magnetic Orders in MnBi2Te4-Bi2Te3 Topological Heterostructures

Chern insulator phase realized in dual-gate-tuned MnBi2Te4 thin films grown by molecular beam epitaxy

Buffer-layer-controlled Nickeline vs Zinc-Blende/Wurtzite-type MnTe growths on c-plane Al2O3 substrates

Single crystal growth, chemical defects, magnetic and transport properties of antiferromagnetic topological insulators

ARPES Investigation of the Electronic Structure and Its Evolution in Magnetic Topological Insulator MnBi2+2nTe4+3n Family.