Abstract:The intrinsic antiferromagnetic topological insulator MnBi2Te4 and members of its family have been the subject of theoretical and experimental research, which has revealed the presence of a variety of defects and disorders that are crucial in determining the topological and magnetic properties. This also brings about challenges in realizing the quantum states like the quantum anomalous Hall and the axion insulator states. Here, utilizing cryogenic magnetoelectric transport and magnetic measurements, we systematically investigate the effects arising from intrinsic doping by antisite defects and extrinsic doping by Sb in MnBi2Te4 epitaxial films grown by molecular beam epitaxy. We demonstrate that the nonequilibrium condition in epitaxy allows a wide growth window for optimizing the crystalline quality and defect engineering. While the intrinsic antisite defects caused by the intermixing between Bi and Mn can be utilized to tune the Fermi level position as evidenced by a p-to-n conductivity transition, the extrinsic Sb-doping not only compensates for this doping effect but also modifies the magnetism and topology of the film, during which a topological phase transition is developed. Conflicting reports from the theoretical calculations and experimental measurements in bulk crystals versus epitaxial films are addressed, which highlights the intimate correlation between the magnetism and topology as well as the balance between the Fermi-level positioning and defect control. The present study provides an experimental support for the epitaxial growth of the intrinsic topological insulator and underlines that the topology, magnetism, and defect engineering should be revisited for enabling a steady and reliable film production.

Doping Nature of Cu in Epitaxial Topological Insulator Bi2te3 Thin Films

Doping Effects Of Sb And Pb In Epitaxial Topological Insulator Bi2se3 Thin Films: An In Situ Angle-Resolved Photoemission Spectroscopy Study

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si

Intrinsic and extrinsic dopings in epitaxial films MnBi2Te4

Intrinsic and extrinsic dopings in epitaxial films MnBi<sub>2</sub>Te<sub>4</sub>

Structural Defects And Electronic Properties Of The Cu-Doped Topological Insulator Bi2se3

Atomic Distributions in Topological Insulator Bi$_2$Se$_{3-x}$Te$_x$

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Interface Structure of A Topological Insulator/Superconductor Heterostructure

Simultaneous Magnetic and Charge Doping of Topological Insulators with Carbon.

Topological Insulator Thin Films Of Bi2te3 With Controlled Electronic Structure

Electronic structure of a superconducting topological insulator Sr-doped Bi2Se3

Universal gapless Dirac cone and tunable topological states in (MnBi$_2$Te$_4$)$_m$(Bi$_2$Te$_3$)$_n$ heterostructures

Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit.

Magnetically Doped Semiconducting Topological Insulators

ARPES investigation of the electronic structure and its evolution in magnetic topological insulator MnBi2+2 n Te4+3 n family

Influence of Doping on the Topological Surface States of Crystalline Bi2Se3 Topological Insulators

ARPES Investigation of the Electronic Structure and Its Evolution in Magnetic Topological Insulator MnBi2+2nTe4+3n Family.

Molecular beam epitaxy growth and doping modulation of topological semimetal NiTe2

Molecular beam epitaxial growth of topological insulators.

Investigating and manipulating the molecular beam epitaxy growth kinetics of intrinsic magnetic topological insulator MnBi2Te4within situangle-resolved photoemission spectroscopy.