Electric field driven quantum phase transition between band insulator and topological insulator

Jun Li,Kai Chang

DOI: https://doi.org/10.1063/1.3268475

2009-11-04

Abstract:We demonstrate theoretically that electric field can drive a quantum phase transition between band insulator to topological insulator in CdTe/HgCdTe/CdTe quantum wells. The numerical results suggest that the electric field could be used as a switch to turn on or off the topological insulator phase, and temperature can affect significantly the phase diagram for different gate voltage and compositions. Our theoretical results provide us an efficient way to manipulate the quantum phase of HgTe quantum wells.

Mesoscale and Nanoscale Physics,Other Condensed Matter

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to drive the quantum phase transition between band insulator (BI) and topological insulator (TI) through an external electric field. Specifically, the author studied how to use the external electric field as a switch to achieve the transition from band insulator to topological insulator in the CdTe/HgCdTe/CdTe quantum well, and explored the influence of temperature and other parameters on this phase transition.

### Main problems
1. **How to drive the transition from band insulator to topological insulator through an external electric field?**
- The author showed through theoretical calculations that the external electric field can significantly change the inter - band coupling, which leads to a strong change in the energy band structure and finally realizes the quantum phase transition from band insulator to topological insulator.

2. **What are the influences of temperature and other parameters on the phase transition?**
- Research shows that temperature, Cd composition, and the thickness of the quantum well will all significantly affect the phase diagram. In particular, the critical gate voltage increases as the temperature rises, and for thicker quantum wells, it is easier to achieve the transition from band insulator to topological insulator.

### Specific methods
- **Model and calculation**: Use the eight - band Kane model and Poisson equation for self - consistent calculations, taking into account the carrier redistribution in the quantum well and the influence of the internal electric field.
- **Parameter analysis**: Studied the influence of different Cd compositions, quantum well thicknesses, and temperatures on the phase transition, and drew a detailed phase diagram.

### Key results
- **Electric - field - driven phase transition**: The external electric field can significantly change the inter - band coupling, so that the states of the lowest conduction band and the highest valence band are exchanged, thus realizing the transition from the normal band structure to the inverted band structure.
- **Temperature effect**: Temperature has a significant influence on the phase transition. Especially at higher temperatures, the critical gate voltage will increase, and for some material combinations, a larger electric field may be required to achieve the phase transition.

### Significance
This research provides an effective method for manipulating quantum phases, which is not only of great significance in basic physics, but also provides theoretical support for the application of spintronic devices based on new topological insulator systems.

### Formula display
The main formulas involved in the paper are as follows:

1. **Kane Hamiltonian**:
\[
H_k=\begin{bmatrix}
A & i\sqrt{3}V^\dagger & \sqrt{2}U & iV & 0 & iU\sqrt{2} & V \\
-i\sqrt{3}V & A_0 & -V^\dagger & i\sqrt{2}U & -\sqrt{3}V & i\sqrt{2}V^\dagger & -U \\
\sqrt{2}U & -V & A_0 & -V^\dagger & i\sqrt{2}U & -\sqrt{3}V & i\sqrt{2}Q \\
iV & i\sqrt{2}U & -V & A_0 - V^\dagger & i\sqrt{2}L & -i\sqrt{2}M & L \\
0 & -\sqrt{3}V & i\sqrt{2}U & i\sqrt{2}L & -(P + Q) & M & 0 \\
iU\sqrt{2} & -i\sqrt{2}V^\dagger & -\sqrt{3}V & -i\sqrt{2}M & M^\dagger & -(P - Q) & -L \\
V & -U & i\sqrt{2}Q & L & 0 & -L^\dagger & -(P + Q)
\end{bmatrix}
\]

2. **Related parameters**:
\[
A = E_v+E_g + k_A c_k
\]
\[
P=-E_v+\frac{\hbar^2}{2m_0}k\gamma_1 k
\]
\[
Q=\frac{\hbar^2}{2m_0}(k_x\gam