Top-gated Germanium Nanowire Quantum Dots in a Few-Electron Regime

Sung-Kwon Shin,Shaoyun Huang,Naoki Fukata,Koji Ishibashi
DOI: https://doi.org/10.1063/1.3684941
IF: 4
2012-01-01
Applied Physics Letters
Abstract:Top gated quantum dots (QDs) have been fabricated from n-type chemically synthesized germanium nanowires (GeNWs) by constricting its length with metal electrode contacts. With an intermediate HfO2 thin film, the constricted GeNW was fully covered by an Omega-shaped top-gate. The QD was probed and characterized by single-electron transport measurements at liquid helium temperature and has been found to reach a few-electron regime, in which the number of confined electrons was tunable from zero. The absolute zero-electron was confirmed with a charge stability diagram, and it was revealed that the extremely small QD arose from potential fluctuations due to phosphorus donors.
What problem does this paper attempt to address?