Abstract:Aluminum-germanium nanowires (NWs) thermal activated solid state reaction is a promising system as very sharp and well defined one dimensional contacts can be created between a metal and a semiconductor, that can become a quantum dot if the size becomes sufficiently small. In the search for high performance devices without variability, it is of high interest to allow deterministic fabrication of nanowire quantum dots, avoiding sample variability and obtaining atomic scale precision on the fabricated dot size. In this paper, we present a reliable fabrication process to produce sub-10 nm Ge quantum dots (QDs), using a combination of ex-situ thermal annealing via rapid thermal annealing (RTA) and in-situ Joule heating technique in a transmission electron microscope (TEM). First we present in-situ direct joule heating experiments showing how the heating electrode could be damaged due to the formation of Al crystals and voids at the vicinity of the metal/NW contact, likely related with electro-migration phenomena. We show that the contact quality can be preserved by including an additional ex-situ RTA step prior to the in-situ heating. The in-situ observations also show in real-time how the exchange reaction initiates simultaneously from several locations underneath the Al contact pad, and the Al crystal grows gradually inside the initial Ge NW with the growth interface along a Ge(111) lattice plane. Once the reaction front moves out from underneath the contact metal, two factors jeopardize an atomically accurate control of the Al/Ge reaction interface. We observed a local acceleration of the reaction interface due to the electron beam irradiation in the transmission electron microscope as well as the appearance of large jumps of the interface in unpassivated Ge wires while a smooth advancement of the reaction interface was observed in wires with an Al2O3 protecting shell on the surface. Carefully controlling all aspects of the exchange reaction, we demonstrate a fabrication process combining ex-situ and in-situ heating techniques to precisely control and produce axial Al/Ge/Al NW heterostructures with an ultra-short Ge segment down to 8 nanometers. Practically, the scaling down of Ge segment length is only limited by the microscope resolution.

Theoretical Study of High Performance Germanium Nanowire Quantum Dot

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Germanium Quantum-Dot Array with Self-Aligned Electrodes for Quantum Electronic Devices

A Single-Electron Transistor and an Even-Odd Effect in Chemically Synthesized Ge Nanowires

Microstructure and Ferromagnetism of Mn0.05Ge0.95 Quantum Dots/Graphene Heterostructures for Spintronic Devices

Flux periodic oscillations and phase-coherent transport in GeTe nanowire-based devices

In-situ high resolution TEM observation of Aluminum solid-state diffusion in Germanium nanowires: fabricating sub-10 nm Ge quantum dots

Vertical field enhanced nanostructure for quantum well infrared photodetector through Germanium subwavelength arrays

One-dimensional Germanium Nanowires for Future Electronics

Top-gated Germanium Nanowire Quantum Dots in a Few-Electron Regime

Memory properties of Ge quantum dots and rings MOS structure prepared by pulsed laser deposition

Electric-field-controlled ferromagnetism in high-Curie-temperature Mn0.05Ge0.95 quantum dots

Germanium Quantum Dot Infrared Photodetectors Addressed by Self-Aligned Silicon Nanowire Electrodes.

Anisotropic and Passivation-Dependent Quantum Confinement Effects in Germanium Nanowires: a Comparison with Silicon Nanowires.

Ge Nanowire Transistors with High-Quality Interfaces by Atomic-Scale Thermal Annealing

Charge-sensing of a Ge/Si core/shell nanowire double quantum dot using a high-impedance superconducting resonator

Influence of point and linear defects on thermal and mechanical properties of germanium nanowire: a molecular dynamics study

Ferromagnetic Germanide in Ge Nanowire Transistors for Spintronics Application

Large Thermoelectric Figure of Merit in Si1−xGex Nanowires

Observation of Distinct Superconducting Phases in Hyperdoped p-type Germanium

Dislocation-Templated Amorphization of Ge2sb2te5 Nanowires under Electric Pulses: A Theoretical Model