Abstract:Electrical and thermal transport in silicon germanium superlattice nanostructures has received extensive attention from scientists for understanding carrier properties at the nanoscale, and the figure-of-merit (ZT) reported in such structures has inspired engineers to develop cost-effective waste heat recovery systems. In this paper, the thermoelectric transport properties of the silicon-based superlattice- and anti-superlattice-nanocrystalline heterostructures are systematically studied by first-principles and molecular dynamics simulations combined with the Boltzmann transport theory. The thermal conductivity, which is thought to be the essential bottleneck for bulk crystalline Si to gain a high ZT value, of such structures is found to be reduced by two orders of magnitude and reaches a level far below the amorphous limit of Si. This is achieved due to the extremely strong phonon-boundary scattering at both grain boundaries and Si-Ge interfaces, which will lead to the phonon mean free path being much smaller than the grain size (Casmir limit): for instance, the dominant phonons are in range of 0.5 to 3 nm for the heterostructures with a grain size of around 8 nm. Meanwhile, the power factor can be preserved at the level comparable to bulk crystalline because of the quantum confinement effect, which resulted from the conduction band minima converge, reduction of band gap, and the short mean free path of carriers. As a result, the ZT of such superlattice based nanomembranes can reach around 0.3 at room temperature, which is two orders of magnitude higher than the bulk crystalline case. The corresponding bulk superlattice-nanocrystalline heterostructures possess a ZT value of 0.5 at room temperature, which is superior to all other bulk silicon-based thermoelectrics. Our results here show that nanostructuring the superlattice structure can further decrease the thermal conductivity while keeping the electrical transport properties at the bulk comparable level, and provides a new strategy for enhancing the thermoelectric performance of the silicon-based nanostructures.

Large Thermoelectric Figure of Merit in Si1−xGex Nanowires

High Thermoelectric Figure of Merit in Silicon-Germanium Superlattice Structured Nanowires

Tunable Thermal Conductivity of Si1−xGex Nanowires

Size Dependent Thermoelectric Properties of Silicon Nanowires

Thermoelectric figure of merit in Ga-doped [0001] ZnO nanowires

Enhanced thermoelectric performance in n-type SrTiO3/SiGe composite.

Enhanced thermoelectric figure of merit in thin GaAs nanowires.

Theoretical study of the thermoelectric properties of SiGe nanotubes

Enhancement of Thermoelectric Figure-of-merit in Laterally-Coupled Nanowire Arrays

Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model

Phonon Mean Free Path Spectrum and Thermal Conductivity for Si1−xGex Nanowires

Thermoelectric Performance of Silicon Nanowires

Superior Thermoelectric Performance of SiGe Nanowires Epitaxially Integrated into Thermal Micro-Harvesters

Enhancement of thermoelectric performance in n-type Si90Ge10-based alloy by metallic Zn doping

First-principles and Molecular Dynamics Study of Thermoelectric Transport Properties of N-type Silicon-Based Superlattice-Nanocrystalline Heterostructures

Energetics and Electronic Properties of Small Diameter Si and Ge Nanotubes

Thermoelectric performance enhancement in p-type Si via dilute Ge alloying and B doping

Enhanced thermoelectric figure-of-merit in boron-doped SiGe thin films by nanograin boundaries

Thermoelectric Properties of Transverse Transport in Nanowire Array Structures

Gate Voltage Controlled Thermoelectric Figure of Merit in Three-Dimensional Topological Insulator Nanowires

High Thermoelectric Performance of Ge–Sb–Te Nanosheets: A Density Functional Study