Abstract:Thermoelectric (TE) materials manifest themselves to enable direct conversion of temperature differences to electric power and vice versa. Though remarkable advances have been achieved in the past decades for various TE systems, the energy conversion efficiency of TE devices, which is characterized by a dimensionless figure-of-merit (ZT = S2σT/(κel + κph)), generally remains a poor factor that severely limits TE devices' competitiveness and range of employment. The bottleneck for substantially boosting the ZT coefficient lies in the strong interdependence of the physical parameters involved in electronic (S and σ, and κel) and phononic (κph) transport. Herein, we propose a new strategy of incorporating nanotwinned structures to decouple electronic and phononic transport. Combining the new concept of nanotwinned structures with the previously widely used nanocrystalline approach, the power factor of the nanotwin-nanocrystalline Si heterostructures is enhanced by 120% compared to that of bulk crystalline Si, while the lattice thermal conductivity is reduced to a level well below the amorphous limit, yielding a theoretical limit of 0.52 and 0.9 for ZT coefficient at room temperature and 1100 K, respectively. This value is almost two orders of magnitude larger than that for bulk Si and twice that for polycrystalline Si. Even for the experimentally obtained nanotwin-nanocrystalline heterostructures (e.g. grain size of 5 nm), the ZT coefficient can be as high as 0.26 at room temperature and 0.7 at 1100 K, which is the highest ZT value among all Si-based bulk nanostructures found thus far. Such substantial improvement stems from two aspects: (1) the improvement in the power factor is caused due to an increase in the Seebeck coefficient (degeneracy of the band valley) and the enhancement of electrical conductivity (the reduction of the effective band mass) and (2) the significant reduction of the lattice thermal conductivity is mainly caused due to the extremely strong phonon-grain boundary and phonon-twin boundary scattering. Our results suggest that nanotwinned structures are excellent building blocks for enhancing TE performance in diamond-like semiconductors, and our study provides a new strategy for the innovative development of other TE materials.

Enhancement of Thermoelectric Figure-of-merit in Laterally-Coupled Nanowire Arrays

High Thermoelectric Figure of Merit in Silicon-Germanium Superlattice Structured Nanowires

Thermoelectric Properties of Transverse Transport in Nanowire Array Structures

Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model

Enhanced thermoelectric figure of merit in thin GaAs nanowires.

High ZT 2D Thermoelectrics by Design: Strong Interlayer Vibration and Complete Band‐Extrema Alignment

Enhanced thermoelectric performance in n-type SrTiO3/SiGe composite.

Large Thermoelectric Figure of Merit in Si1−xGex Nanowires

Enhanced Thermoelectric Performance In Graphitic Zno (0001) Nanofilms

Decouple Electronic and Phononic Transport in Nanotwinned Structures: a New Strategy for Enhancing the Figure-of-merit of Thermoelectrics.

Size Dependent Thermoelectric Properties of Silicon Nanowires

Enhancement of thermoelectric performance in n-type Si90Ge10-based alloy by metallic Zn doping

Boosting Thermoelectric Performance of BayCo4Sb12 by Interlinking Large-Aspect-ratio Silver Nanowires at the Triple Junction of Grain Boundaries

Improved zT in Nb 5 Ge 3 –GeTe thermoelectric nanocomposite

Significant ZT Enhancement in p-type Ti(Co,Fe)Sb-InSb Nanocomposites via a Synergistic High Mobility Electron Injection Energy filtering and Boundary Scattering Approach

First-principles and Molecular Dynamics Study of Thermoelectric Transport Properties of N-type Silicon-Based Superlattice-Nanocrystalline Heterostructures

Enhanced thermoelectric performance of β-Zn4Sb3 based nanocomposites through combined effects of density of states resonance and carrier energy filtering

Degradation of the ZT thermoelectric figure of merit in silicon when nanostructuring: From bulk to nanowires

High Thermoelectric Figure-Of-Merit in Kondo Insulator Nanowires at Low Temperatures

Realization of high thermoelectric performance in solution-synthesized porous Zn and Ga codoped SnSe nanosheets

Enhanced Thermoelectric Performance of N‐Type PbSe Through Semi‐Coherent Nanostructure by AgCuTe Alloying