Ultra-shallow quantum dots in an undoped GaAs/AlGaAs 2D electron gas

W. Y. Mak,F. Sfigakis,K. Das Gupta,O. Klochan,H. E. Beere,I. Farrer,J. P. Griffiths,G. A. C. Jones,A. R. Hamilton,D. A. Ritchie

DOI: https://doi.org/10.1063/1.4795613

2013-03-17

Abstract:We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more than one order of magnitude in mobility (at 2E11 /cm^2) with respect to doped heterostructures with similar depths is observed. These undoped wafers can easily be gated with surface metallic gates patterned by e-beam lithography, as demonstrated here from single-level transport through a quantum dot showing large charging energies (up to 1.75 meV) and excited state energies (up to 0.5 meV).

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to improve the performance of shallow two - dimensional electron gas (2DEG) quantum dots, especially in undoped GaAs/AlGaAs heterostructures. Specifically, the author aims to improve the characteristics of quantum dots through the following aspects:

1. **Improve mobility**: Compared with doped heterostructures, undoped heterostructures can significantly improve mobility. At the same time carrier density, the undoped 2DEG shows an improvement in mobility of more than one order of magnitude.

2. **Reduce charge noise**: In doped heterostructures, charge noise (such as random telegraph signal noise, RTS) is a serious problem, which will affect the stability and performance of quantum dots. Undoped heterostructures can avoid this charge noise caused by dopants.

3. **Achieve finer features and a higher energy scale**: Shallow 2DEG allows for more precise transfer from the surface metal gate to the 2DEG, and the energy scale of quantum dots is larger, so that it can operate at a higher temperature.

4. **Improve repeatability**: Undoped quantum dots show better repeatability during the thermal cycling process, reducing the uncontrollable factors caused by dopants.

To achieve these goals, the author prepared an ultrashallow (only 30 - nanometer - deep) undoped GaAs/AlGaAs 2DEG and defined quantum dots by electron - beam lithography technology. The experimental results show that these quantum dots have large charging energy (up to 1.75 meV) and excited - state energy (up to 0.5 meV), and show a good Coulomb blockade effect at low temperatures.

In conclusion, this paper shows how to overcome the limitations in traditional doped materials by using undoped heterostructures, thus providing a new direction for future quantum dot research and applications.