Abstract:Solution processed field-effect transistors based on single crystalline silicon nanowires (Si NWs) with metal Schottky contacts are demonstrated. The semiconducting layer was deposited from a nanowire ink formulation at room temperature. The devices with 230nm thick SiO2 gate insulating layers show excellent output current-voltage characteristics with early saturation voltages under 2 volts, constant saturation current and exceptionally low dependence of saturation voltage with the gate field. Operational principles of these devices are markedly different from traditional ohmic-contact field-effect transistors (FETs), and are explained using the source-gated transistor (SGT) concept in which the semiconductor under the reverse biased Schottky source barrier is depleted leading to low voltage pinch-off and saturation of drain current. Device parameters including activation energy are extracted at different temperatures and gate voltages to estimate the Schottky barrier height for different electrode materials to establish transistor performance - barrier height relationships. Numerical simulations are performed using 2D thin-film approximation of the device structures at various Schottky barrier heights. Without any adjustable parameters and only assuming low p-doping of the transistor channel, the modelled data show exceptionally good correlation with the measured data. From both experimental and simulation results, it is concluded that source-barrier controlled nanowire transistors have excellent potential advantages compared with a standard FET including mitigation of short-channel effects, insensitivity in device operating currents to device channel length variation, higher on/off ratios, higher gain, lower power consumption and higher operational speed for solution processable and printable nanowire electronics.

Synthesis and Fabrication of High‐Performance N‐type Silicon Nanowire Transistors

High On/off Ratio P-Type Field-Effect Transistor Enabled by a Single Heavily Al-doped Α-Si3n4 Nanowire

Nanowire FETs with Nearly Single-Crystalline Si Channels by NiSi2-Seed Initiated Lateral Epitaxial Crystallization (SILEC)

Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication.

Si Nanowire - Array Source Gated Transistors

P-Type 3C-Sic Nanowires and Their Optical and Electrical Transport Properties

Ge/Si nanowire heterostructures as high-performance field-effect transistors

Highly Focused Femtosecond Laser Directed Selective Boron Doping in Single SiC Nanowire Device for N-P Conversion

Silicon Nano-Wire Fabricated by Boe Silicon Etching

Performance Improvement of Planar Silicon Nanowire Field Effect Transistors Via Catalyst Atom Doping Control

Silicon Nanowires, Catalytic Growth and Electrical Characterization

Synthesis of high quality p-type Zn3P2 nanowires and their application in MISFETs

Use of phosphine as an n-type dopant source for vapor-liquid-solid growth of silicon nanowires

In-plane Silicon Nanowires for Field Effect Transistor Application

N-Type Area of PN Junction Etched in BOE Solution

Unexpected Phosphorus Doping Routine of Planar Silicon Nanowires for Integrating CMOS Logics.

Highly uniform and stable n-type carbon nanotube transistors by using positively charged silicon nitride thin films

An N-Type Silicon Nanowire Dot Based Single-Electron Transistor

High-Performance Si Nanowire Transistors on Fully Si Bulk Substrate from Top-Down Approach: Simulation and Fabrication

Top-down Fabricated Silicon-Nanowire-based Field-Effect Transistor Device on a (111) Silicon Wafer.

High‐Performance Flexible Silicon Nanowire Field Effect Transistors on Plastic Substrates