Abstract:Flexible field emission (FE) arrays have a wide range of applications in next generation low-cost, lightweight and wearable electronics, roll-up displays, and large-area circuits on curved objects, yet the growth of tapered, high-quality single-crystalline nanostructure-based emitters on flexible substrates with superior FE properties remains challenging and related work is limited. On the other hand, our recent studies have shown that silicon carbide (SiC) 1D nanostructures could meet nearly any stringent requirement for an ideal FE emitter. In this contribution, we report the growth of quasi-aligned, single-crystalline n-type doped (N-doped) 3C-SiC nanoneedles (3C-SiCNNs) on highly flexible carbon fabric via the catalyst assisted pyrolysis of polysilazane. The as-synthesized SiCNNs possess a tapered structure with tiny clear tips with sizes of several to tens of nanometers. The fabricated 3C-SiCNNs have extremely low emission turn-on fields (E-on) in the range of 0.5-1.6 V mu m(-1) with an average of 1.1 V mu m(-1), which is comparable to the lowest value ever reported for 1D nanostructure emitters that, however, are grown on rigid substrates. Specifically, our SiCNN arrays on carbon fabric are mechanically and electrically robust, and can withstand mechanical bending up to 500 times and still retain excellent FE performance with E-on of similar to 1.1 V mu m(-1). The field-enhancement factor has been calculated to be 6.5 x 10(3). The superior FE properties can be attributed to the significant enhancements of the tapered unique morphology and N-doping of the SiCNNs. Calculations based on local density functional theory suggest that nitrogen dopants in the 3C-SiC nanostructure could favor a more localized impurity state near the conduction band edge, which improves the electron field emission. We strongly believe that the present work will provide a new insight into the fabrication of flexible field emission arrays with ultralow turn-on fields enhanced by both shape and doping.

P-Type 3C-Sic Nanowires and Their Optical and Electrical Transport Properties

High On/off Ratio P-Type Field-Effect Transistor Enabled by a Single Heavily Al-doped Α-Si3n4 Nanowire

Synthesis and Fabrication of High‐Performance N‐type Silicon Nanowire Transistors

Shape And Doping Enhanced Field Emission Properties Of Quasialigned 3c-Sic Nanowires

First Principles Study of P-Type Doping in SiC Nanowires: Role of Quantum Effect

Nanowire FETs with Nearly Single-Crystalline Si Channels by NiSi2-Seed Initiated Lateral Epitaxial Crystallization (SILEC)

Sic Nanowire Field-Effect Transistors Based On Dielectrophoresis

Highly Sensitive Piezoresistance Behaviors of N-Type 3C-Sic Nanowires

Field-effect Transistor Based on /spl Beta/-Sic Nanowire

Synthesis of N-Type SiC Nanowires with Tailored Doping Levels

Triangular prism-shaped p-type 6H-SiC nanowires

Enhanced field emission of p-type 3C-SiC nanowires with B dopants and sharp corners

Si Doping-Induced Phase Control, Formation of P-Type and N-Type GaAs Nanowires

Highly Focused Femtosecond Laser Directed Selective Boron Doping in Single SiC Nanowire Device for N-P Conversion

High performance Bi2Se3 nanowire field-effect transistors

Synthesis of high quality p-type Zn3P2 nanowires and their application in MISFETs

Growth Of N-Type 3c-Sic Nanoneedles On Carbon Fabric: Toward Extremely Flexible Field Emission Devices

Fabrication and Electrical and Photosensitive Properties of Silicon Nanowire P-N Homojunctions

Single Crystalline Nitrogen-Doped InP Nanowires for Low-Voltage Field-Effect Transistors and Photodetectors on Rigid Silicon and Flexible Mica Substrates

Catalytic Synthesis and Photoluminescence of Needle-Shaped 3c–sic Nanowires

Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon