Fabrication and Electrical and Photosensitive Properties of Silicon Nanowire P-N Homojunctions

Guojia Fang,Yanzhao Cheng,Lei Ai,Chun Li,Jun He,Chong Wang,Huihui Huang,Longyan Yuan,Xingzhong Zhao
DOI: https://doi.org/10.1002/pssa.200723266
2008-01-01
Abstract:Graded silicon nanowire (SiNW) p-n homojunctions were prepared by an electroless metal deposition method on as-prepared planar Si p-n junctions made by the B+ diffusion method. The nanowire p-n junctions show good rectifying behavior and their turn-on voltages (0.78 V at room temperature) are found to be independent of the nanowire length. Temperature-dependent current-voltage properties in the range of 223-363 K were investigated and we demonstrated that the turn-on voltage decreases from 0.87 V to 0.60 V and the ideality factor n reduces from 8.5 to 3.5 with increasing operating temperature. The results comply very well with the existing p-n junction electron transport mechanism. The potential barrier of a typical SiNW p-n junction obtained through capacitance-voltage measurement accords with its turn-on voltage. Through I-V and C-V measurements, the nanowire homojunction shows good sensitivity toward visible light and a responsivity of 1.39 A/W under a 5 V reverse bias was obtained. These results present potential applications in future nano-electronic and photonic devices based on SiNW p-n homejunction arrays. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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