Abstract:Applications of one-dimensional (1D) semiconductor nanostructures in nanoelectronics and nano-optoelectronics rely on the ability to rationally tune their electrical transport properties. Here we report the synthesis of single-crystalline Ag-doped ZnSe nanowires (NWs) by using silver sulfide (Ag2S) as the p-type dopant via a thermal evaporation method. The ZnSe: Ag NWs had the zinc blende structure with [111] growth orientation. Significantly, the conductivities of the NWs could be tuned over 9 orders of magnitude by adjusting the Ag doping levels. Field-effect transistors (FETs) constructed from the ZnSe: Ag NWs verified their p-type nature with a hole concentration of up to 2.1 x 10(19) cm(-3), which is the highest value achieved for p-type ZnSe nanostructures thus far. Schottky barrier diodes (SBDs) based on the ZnSe: Ag NW/ITO junctions exhibited remarkable rectifying behavior, with a rectification ratio of > 10(7) and a small ideality factor of similar to 1.29 at 320 K. Moreover, photovoltaic devices were fabricated from the ZnSe NW array/Si p-n heterojunctions by aligning the p-ZnSe NWs in a parallel fashion on a n-Si substrate. The device with a graphene top electrode showed a large fill factor (FF) of 61%, yielding a power conversion efficiency of similar to 1.04%. The realization of p-type ZnSe NWs with tunable conductivity opens up opportunities for a host of high-performance nanoelectronic and nano-optoelectronic devices.

Synthesis of high quality p-type Zn3P2 nanowires and their application in MISFETs

P − Zn 3 P 2 Single Nanowire Metal-Semiconductor Field-Effect Transistors

Rational synthesis of p-type zinc oxide nanowire arrays using simple chemical vapor deposition.

Controllable Electrical Properties of Metal-Doped In2O3 Nanowires for High-Performance Enhancement-Mode Transistors.

Phosphorus Doped Zn(1-x)Mg(x)O Nanowire Arrays.

Nanowire FETs with Nearly Single-Crystalline Si Channels by NiSi2-Seed Initiated Lateral Epitaxial Crystallization (SILEC)

Synthesis and Fabrication of High‐Performance N‐type Silicon Nanowire Transistors

P-Type Zns:N Nanowires: Low-Temperature Solvothermal Doping and Optoelectronic Properties

Synthesis of ZnO Nanowires for Thin Film Network Transistors

Electrical properties of Cu doped p-ZnTe nanowires

Nonpolar-Oriented Wurtzite InP Nanowires with Electron Mobility Approaching the Theoretical Limit

High-Performance Zno Nanowire Field-Effect Transistor With Forming Gas Treated Sio2 Gate Dielectrics

Silicon Nano-Wires Fabricated by a Novel Thermal Evaporation of Zinc Sulfide

Synthesis, Properties, and Top-Gated Metal–oxide–semiconductor Field-Effect Transistors of P-Type GaSb Nanowires

ZnO Nanowire and $\hbox{ws}_{2}$ Nanotube Electronics

Synthesis and Electrical Properties of p + -Si/n-ZnO Nanowires Heterojunction

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Tuning The P-Type Conductivity Of Znse Nanowires Via Silver Doping For Rectifying And Photovoltaic Device Applications

Back-gate ZnO Nanowire Field-Effect Transistors Each with a Top Ω Shaped Au Contact

Synthesis and electrical properties of ZnO nanowires.

High On/off Ratio P-Type Field-Effect Transistor Enabled by a Single Heavily Al-doped Α-Si3n4 Nanowire