Highly Sensitive Piezoresistance Behaviors of N-Type 3C-Sic Nanowires

Jinghui Bi,Guodong Wei,Lin Wang,Fengmei Gao,Jinju Zheng,Bin Tang,Weiyou Yang

DOI: https://doi.org/10.1039/c3tc30655k

IF: 6.4

2013-01-01

Journal of Materials Chemistry C

Abstract:We reported the piezoresistance behaviors of n-type 3C-SiC nanowires, which show that the present SiC nanowires could be an excellent candidate for building robust pressure sensors with high sensitivities.

What problem does this paper attempt to address?

Enhanced Piezoresistive Behavior of SiC Nanowire by Coupling with Piezoelectric Effect

Jie Wu,Fengmei Gao,Gang Shao,Zhentao Du,Weiyou Yang,Lin Wang,Zhenxia Wang,Shanliang Chen

DOI: https://doi.org/10.1021/acsami.0c04111

2020-05-13

Abstract:Improving the sensitivity of the piezoresistive behavior of semiconductor nanostructures is critically important because it is one of the keys to explore advanced pressure sensors with desired sensitivity. Herein, we reported a strategy for improving the piezoresistive behavior of SiC nanowire by coupling with the piezoelectric effect of ZnO nanolayers, which were grown by an atomic layer deposition approach. As a result, the detected current of the as-constructed ZnO/SiC heterojunction nanowires is 6 times more than SiC nanowires, suggesting its substantially improved sensitivity. Moreover, the measured ΔR/R0 value and gauge factor (GF) of the ZnO/SiC heterojunction nanowires could be up to 0.82 and 50.93, respectively, which was profoundly higher than those of the SiC counterpart and most of reported positive piezoresistive SiC sensors.
Piezoresistance in Si3N4 nanobelts: toward highly sensitive and reliable pressure sensors

jinghui bi,guodong wei,minghui shang,fengmei gao,bin tang,weiyou yang

DOI: https://doi.org/10.1039/c4tc01810a

IF: 6.4

2014-01-01

Journal of Materials Chemistry C

Abstract:To achieve precision instrumentation and accurate measurement, there is increasing need for pressure sensors to be well serviced in harsh environments. We report, for the first time, piezoresistance in single-crystalline Si3N4 nanobelts by conductive atomic force microscopy (C-AFM). The transverse electromechanical properties of the Si3N4 nanobelt were investigated under various loading forces applied by the C-AFM tip. The calculated transverse piezoresistance coefficient pi([1 (2) over bar0]) of the nanobelt was in the range of 2.2 to 8.8 x 10 (11) Pa-1 under the applied loading forces ranging from 25.6 to 135.3 nN. The relationship between the piezoresistance coefficients and the applied forces was almost linear. Significant and linear decreases in nanobelt resistance with increasing loading forces were observed, which exhibited a variation of similar to 3 M Omega with a changed force of 1 nN, implying that the pressure sensors have high sensitivity. Stable and repeatable I-V curves through multiple voltage sweepings were accomplished, suggesting that the Si3N4 nanobelts pressure sensors are quite reliable.
Piezoresistance Behaviors of Ultra-Strained SiC Nanowires

Ruiwen Shao,Kun Zheng,Yuefei Zhang,Yujie Li,Ze Zhang,Xiaodong Han

DOI: https://doi.org/10.1063/1.4769217

IF: 4

2012-01-01

Applied Physics Letters

Abstract:In situ electrical measurement experiments were carried out in individual SiC nanowires (NWs) subjected to tensile strain using a transmission electron microscope. Fracture strain approaching 10% was achieved for a diamond-structure SiC NW with a 〈111〉 direction. With an increase in the tensile strain, the conductance increased monotonously. The current rate of increase remained constant prior to fracture. The calculated piezoresistance coefficient of this SiC NW was −1.15 × 10−11 Pa−1, which is similar to the coefficient of the bulk material. Our results indicate that these SiC NWs can be used as pressure sensors even in very high-pressure environments.
Piezoresistance characterization of silicon nanowires in uniaxial and isostatic pressure variation

Elham Fakhri,Rodica Plugaru,Muhammad Taha Sultan,Thorsteinn Hanning Kristinsson,Hákon Örn Árnason,Neculai Plugaru,Andrei Manolescu,Snorri Ingvarsson,Halldor Gudfinnur Svavarsson

DOI: https://doi.org/10.48550/arXiv.2206.04991

2022-06-24

Abstract:Silicon nanowires (SiNWs) are known to exhibit large piezoresistance (PZR) effect, making it suitable for various sensing applications. Here, we report the results of a PZR investigation on randomly distributed and interconnected vertical silicon nanowire arrays as a pressure sensor. The samples were produced from p-type (100) Si wafers using a silver catalysed top-down etching process. The piezoresistance response of these SiNW arrays was analysed by measuring their I-V characteristics under applied uniaxial as well as isostatic pressure. The interconnected SiNWs exhibit increased mechanical stability in comparison with separated or periodic nanowires. The repeatability of the fabrication process and statistical distribution of measurements were also tested on several samples from different batches. A sensing resolution down to roughly \SI{1}{\milli\bar} pressure was observed with uniaxial force application, and more than two orders of magnitude resistance variation was determined for isostatic pressure below atmospheric pressure.

Applied Physics
Experimental Investigation of Piezoresistive Effect in P-Type 4H–sic

Tuan-Khoa Nguyen,Hoang-Phuong Phan,Toan Dinh,Jisheng Han,Sima Dimitrijev,Philip Tanner,Abu Riduan Md Foisal,Yong Zhu,Nam-Trung Nguyen,Dzung Viet Dao

DOI: https://doi.org/10.1109/led.2017.2700402

IF: 4.8157

2017-01-01

IEEE Electron Device Letters

Abstract:This letter presents for the first time the piezoresistive effect in p-type 4H–SiC. Longitudinal and transverse p-type 4H–SiC piezoresistors with a doping concentration of $10^{18}$ cm $^{-3}$ were fabricated along [ $1\overline {1}00$ ] directions. Ni/Al electrodes annealed at 1000 °C showed a good ohmic contact, and then, the longitudinal and transverse gauge factors were found to be as high as 31.5 and −27.3, respectively. The large gauge factors, attributed to the change of valance energy bands upon application of mechanical strain, and the linear relationship between the resistance change versus induced strain demonstrate the potential of p-type 4H–SiC for mechanical sensing applications.
Characterization of the Piezoresistance in Highly Doped P-Type 3C-Sic at Cryogenic Temperatures

Hoang-Phuong Phan,Karen M. Dowling,Tuan-Khoa Nguyen,Caitlin A. Chapin,Toan Dinh,Ruth A. Miller,Jisheng Han,Alan Iacopi,Debbie G. Senesky,Dzung Viet Dao,Nam-Trung Nguyen

DOI: https://doi.org/10.1039/c8ra05797d

IF: 4.036

2018-01-01

RSC Advances

Abstract:This paper reports on the piezoresistive effect in p-type 3C-SiC thin film mechanical sensing at cryogenic conditions. Nanothin 3C-SiC films with a carrier concentration of 2 × 1019 cm-3 were epitaxially grown on a Si substrate using the LPCVD process, followed by photolithography and UV laser engraving processes to form SiC-on-Si pressure sensors. The magnitude of the piezoresistive effect was measured by monitoring the change of the SiC conductance subjected to pressurizing/depressurizing cycles at different temperatures. Experimental results showed a relatively stable piezoresistive effect in the highly doped 3C-SiC film with the gauge factor slightly increased by 20% at 150 K with respect to that at room temperature. The data was also in good agreement with theoretical analysis obtained based on the charge transfer phenomenon. This finding demonstrates the potential of 3C-SiC for MEMS sensors used in a large range of temperatures from cryogenic to high temperatures.
Improved piezoresistive properties of ZnO/SiC nanowire heterojunctions with an optimized piezoelectric nanolayer

Lin Wang,Jie Wu,Minghui Shang,Fengmei Gao,Xiaoxiao Li,Yapeng Zheng,Dongdong Zhang,Weiyou Yang,Shanliang Chen

DOI: https://doi.org/10.1007/s10853-021-06411-1

IF: 4.5

2021-08-09

Journal of Materials Science

Abstract:The vital issue for semiconductor pressure sensors is how to improve the sensitivity of their piezoresistive behavior. In this work, aiming to substantially promote the sensitivity, ZnO/SiC nanowire heterojunctions with various ZnO piezoelectric shell thicknesses were constructed by adjusting the depositing times of atomic layer deposition (ALD). It was found that the thicknesses of coupled ZnO nanolayers played a profound effect on the response of the heterojunctions to the change of stresses, representing the tailored piezoresistive behaviors. Accordingly, the piezoresistive coefficient was optimized to ~ 9.47 × 10–11 Pa−1 with an enhanced ΔR/R0 value of ~ 0.88, once the ZnO nanolayer thickness is fixed at ~ 20 nm, superior to most of pressures sensors based on SiC nanomaterials. This work may provide a novel strategy for exploring advanced SiC-based pressure sensors by coupling with suitable thickness of the piezoelectric nanolayer to improve piezoresistive behaviors.Graphical abstractThe tailored piezoresistive performance of ZnO/SiC nanowire heterojunctions with a adjusted shell thicknesses of ZnO piezoelectric nanolayers was reported, which had an enhanced piezoresistive coefficient of 9.47 × 10–11 Pa−1 and a ΔR/R0 of 0.88.

materials science, multidisciplinary
P-Type 3C-Sic Nanowires and Their Optical and Electrical Transport Properties

Youqiang Chen,Xinni Zhang,Qing Zhao,Li He,Chengkuang Huang,Zhipeng Xie

DOI: https://doi.org/10.1039/c1cc10863h

IF: 4.9

2011-01-01

Chemical Communications

Abstract:We report for the first time the fabrication of p-type SiC nanowire field-effect transistors (FETs) using an individual Al-doped 3C-SiC nanowire with a single crystalline structure. The Raman spectroscopy of the as-grown p-type wire indicates that the linewidth and peak intensity of LO-phonon bands are sensitive to temperature variations.
Highly sensitive hybrid silicon carbonitride piezoresistive sensors enabled by coupling piezoelectric effect

Qi Zhou,Duo Yang,Pengchong Xu,Wei Xue,Ningbo Liao

DOI: https://doi.org/10.1016/j.cej.2024.149758

IF: 15.1

2024-02-20

Chemical Engineering Journal

Abstract:Piezoresistive sensors with high working temperature and excellent sensitivity are highly desired for in-situ measuring pressure in various high temperature applications. Polymer-derived silicon carbonitrides (SiCNs) are a novel class of materials with excellent stability and piezoresistive performance at high temperature, yet challenging to build to meet the rapid growth of large-area electronics. This work demonstrates a thin and highly sensitive hybrid SiCN piezoresistive films enabled by coupling piezoelectric effect of Al-doped ZnO (AZO). The hybrid thin films with the optimal nano-domain phase of SiCN features ultrahigh gauge factors of 6518 to 31,195 upon various compressive stresses, which are significantly larger than those of single-layer SiCN and other existing piezoresistive materials. First-principles calculations reveal that the charges from AZO layer accumulate and move toward the carbon clusters in SiCN under compressive stress, resulting in greater tunneling currents between carbon clusters and more significant piezoresistive effect. Moreover, superior piezoresistive performance of the optimal hybrid system can be characterized by atomic-scale binding energy and band gap change, as formation of the hybrid structure facilitates interfacial charge separation and increases density of electron at conduction band. This work opens an avenue for improving sensitivity of piezoresistive sensors by effective coupling of piezoelectric materials.

engineering, chemical, environmental
Giant Piezoresistance in B-Doped SiC Nanobelts with a Gauge Factor of −1800

Xiaoxiao Li,Fengmei Gao,Lin Wang,Shanliang Chen,Bei Deng,Lang Chen,Chun-Ho Lin,Weiyou Yang,Tom Wu

DOI: https://doi.org/10.1021/acsami.0c13800

2020-09-29

Abstract:The giant piezoresistance effect (PRE) of semiconductors as featured by a high gauge factor (GF) is recognized as the prerequisite for realizing optimal pressure sensors with desired high sensitivity. In this work, we report the discovery of giant PRE in SiC nanobelts with a record GF measured using an atomic force microscope. The transverse piezoresistance coefficient along the [111] direction reaches as high as −312.51 × 10–11 pa–1 with a corresponding GF up to −1875.1, which is twice more than the highest value ever reported on SiC nanomaterials. The first-principles calculations reveal that B doping turns the acceptor states in the bandgap into deeper impurity levels, which makes the major contribution to the observed giant piezoresistance behavior. Our result provides new insights on designing pressure sensors based on SiC nanomaterials.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c13800?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c13800</a>.Crystal structure models for calculation; HRTEM image; EDX spectrum; elemental mapping of Si and C; XPS spectrum; current within the SiC nanobelt under various compressive forces at an external bias voltage of 8 V; nanobelt resistances and applied stresses; the recorded I–V curves of two SiC nanobelts with typical thicknesses of ∼90 and ∼200 nm without applied compressive force; the relationship between the ca. piezoresistance coefficients and applied forces; piezoresistance behaviors of a single SiC nanobelt with a thickness of ∼200 nm (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c13800/suppl_file/am0c13800_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Ultrahigh sensitive piezotronic strain sensors based on a ZnSnO 3 nanowire/microwire

Jyhming Wu,Chengying Chen,Yan Zhang,Kuanhsueh Chen,Ya Yang,Youfan Hu,Hau He,Zhonglin Wang

DOI: https://doi.org/10.1021/nn3010558

IF: 17.1

2012-01-01

ACS Nano

Abstract:We demonstrated a flexible strain sensor based on ZnSnO 3 nanowires/microwires for the first time. High-resolution transmission electron microscopy indicates that the ZnSnO 3 belongs to a rhombohedral structure with an R3c space group and is grown along the [001] axis. On the basis of our experimental observation and theoretical calculation, the characteristic I-V curves of ZnSnO 3 revealed that our strain sensors had ultrahigh sensitivity, which is attributed to the piezopotential-modulated change in Schottky barrier height (SBH), that is, the piezotronic effect. The on/off ratio of our device is ∼ 587, and a gauge factor of 3740 has been demonstrated, which is 19 times higher than that of Si and three times higher than those of carbon nanotubes and ZnO nanowires. © 2012 American Chemical Society.
Giant Piezoresistance And Its Origin In Si(111) Nanowires: First-Principles Calculations

J. X. Cao,X. G. Gong,R. Q. Wu

DOI: https://doi.org/10.1103/PhysRevB.75.233302

IF: 3.7

2007-01-01

Physical Review B

Abstract:Through systematic first-principles calculations, we found extraordinarily high piezoresistance coefficients in a pristine Si(111) nanowire. This stems from interplay between the presence of two surface states with different localizations and unusual surface relaxation. Lattice compression along the axis causes switch between light and heavy surface states and, subsequently, alters the effective masses of carriers. Fascinatingly, model calculations produced main features of experimental data [R. R. He and P. D. Yang, Nat. Nanotechnol. 1, 42 (2006)] despite much difference in wire sizes and surface conditions.
Effect of Piezoresistive Behavior on Electron Emission from Individual Silicon Carbide Nanowire

Peng Zhao,Yu Zhang,Shuai Tang,Runze Zhan,Juncong She,Jun Chen,Ningsheng Xu,Shaozhi Deng

DOI: https://doi.org/10.3390/nano9070981

2019-07-06

Abstract:The excellent properties of silicon carbide (SiC) make it widely applied in high-voltage, high-power, and high-temperature electronic devices. SiC nanowires combine the excellent physical properties of SiC material and the advantages of nanoscale structures, thus attracting significant attention from researchers. Herein, the electron vacuum tunneling emission characteristics of an individual SiC nanowire affected by the piezoresistive effect are investigated using in situ electric measurement in a scanning electron microscope (SEM) chamber. The results demonstrate that the piezoresistive effect caused by the electrostatic force has a significant impact on the electronic transport properties of the nanowire, and the excellent electron emission characteristics can be achieved in the pulse voltage driving mode, including lower turn-on voltage and higher maximum current. Furthermore, a physical model about the piezoresistive effect of SiC nanowire is proposed to explain the transformation of electronic transport under the action of electrostatic force in DC voltage and pulsed voltage driving modes. The findings can provide a way to obtain excellent electron emission characteristics from SiC nanowires.
Giant Piezoresistance Measured in N-Type Nanothick Si Layer That Has Interface with $\Hbox{sio}_{2}$

Yongliang Yang,Xinxin Li

DOI: https://doi.org/10.1109/led.2010.2098388

IF: 4.8157

2011-01-01

IEEE Electron Device Letters

Abstract:A giant piezoresistive coefficient is, for the first time, experimentally measured for n-type nanothick silicon. Compared to n-type bulk silicon, the nanothick silicon resistors exhibit at least one order of magnitude higher piezoresistive coefficient. Based on 2-D quantum confinement effect, our theoretic calculation indicates that the piezoresistive sensitivity will decrease and approach to zero, along with continually thinning the n-type silicon resistor. Thus, quantum effect is not responsible for the giant piezoresistance of the n-type nanothick silicon. By phenomenon analysis and qualitative modeling, we attribute the obtained giant piezoresistance to stress-enhanced Si/SiO2 interfacial electron-trapping effect. Hence, the giant piezoresistance in n-type nanothick silicon is dominantly originated from electron concentration change, instead of equivalent mobility change in conventional piezoresistance of bulk silicon.
Piezojunction effect in heterojunctions under external bias for ultrasensitive strain sensing

Cong Thanh Nguyen,Erik W. Streed,Toan Dinh,Nam-Trung Nguyen,Van Thanh Dau,Dzung Viet Dao

DOI: https://doi.org/10.1016/j.apmt.2024.102157

IF: 8.663

2024-03-14

Applied Materials Today

Abstract:This paper investigates for the first time the piezojunction effect in heterojunctions under external bias for ultrasensitive strain sensing. As a proof of concept, we used sensing devices made of 3C-SiC/Si heterostructure with vertically aligned electrodes. Applying the beam bending method to characterize the sensing effect, the bending strain was introduced along the typical orientation [100] or [110] on (100) Si plane. Experimental results show a linear relationship between the relative change in the forward current and the applied strain from 0 to 500 ppm, decreasing under the tensile strain while increasing under the compressive strain. At the forward bias of 8 V, the obtained gauge factors ( GFs) are 199.7 for [100] orientation and 173.1 for [110] orientation, which significantly enhance about 630 % and 540 % compared to the highest GF of n-type 3C-SiC in the literature. Interestingly, the GFs of the n + -3C-SiC/p-Si heterostructure are positive in contrast to the negative GFs of n-3C-SiC thin films. The results were explained by the strain modulation on the band split and electron mass shift along the out-of-plane direction as well as by the change in the barrier height, depletion region width, and carrier concentrations under the forward bias. The ultrasensitive piezojunction effect in the 3C-SiC/Si heterojunction demonstrated in this study can pave the way toward developing ultrasensitive mechanical sensors.

materials science, multidisciplinary
Optimal design of SiC piezoresistive pressure sensor considering material anisotropy

Chen Wu,Xudong Fang,Xin Guo,Libo Zhao,Bian Tian,Zhuangde Jiang

DOI: https://doi.org/10.1063/1.5120083

IF: 1.6

2020-01-01

Review of Scientific Instruments

Abstract:Material properties of SiC determine the application potential of corresponding sensors in a high temperature and harsh environment. However, few reports are available to describe basic design principles of SiC sensors. In this paper, aiming at improving the sensitivity of the sensor, the structural design of a full-SiC piezoresistive pressure sensor is studied from the aspects of diaphragm structure, material, piezoresistor arrangement, and dimension. The differences between the isotropy theoretical calculation and the anisotropy simulation are analyzed. Furthermore, in order to conform to the anisotropic intrinsic properties of the SiC material, a fitting curve between the diaphragm stress and the corresponding design parameter a/h is obtained by using a quadratic function. Through comparison, a square diaphragm can obtain more stress than a circular diaphragm; however, it is not suitable for SiC pressure sensors due to the process difficulties in anisotropic etching. Both experiment and simulation results show that higher output sensitivity can be obtained when the four piezoresistors are distributed along the radial direction of the diaphragm. With the control variable method, we found that when the area of the edge piezoresistors is increased by 10 times, output sensitivity will decline by 23.66%. Instead, the size of the two piezoresistors at the center shows a minor impact. Therefore, the size of edge piezoresistors has a significant effect on output sensitivity, which is worth paying attention to and should be minimized. Sensor prototypes were fabricated with optimal design, and preliminary experimental results show that zero output is only slightly affected by temperature due to the good thermal stability of SiC materials. Published under license by AIP Publishing.
Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor

Jianqi Dong,Liang Chen,Yuqing Yang,Xingfu Wang

DOI: https://doi.org/10.3762/bjnano.11.166

IF: 3.1

2020-12-10

Beilstein Journal of Nanotechnology

Abstract:1D semiconductor nanowires (NWs) have been extensively studied in recent years due to the predominant mechanical flexibility caused by a large surface-to-volume ratio and unique electrical and optical properties induced by the 1D quantum confinement effect. Herein, we use a top-down two-step preparation method to synthesize AlGaN/AlN/GaN heterojunction NWs with controllable size. A single NW is transferred to a flexible poly(ethylene terephthalate) substrate and fixed by indium tin oxide electrodes to form an ohmic contact for the strain sensor. An external mechanical stress is introduced to study the performance of the fabricated piezotronic strain sensor. The gauge factor is as high as 30 under compressive or tensile stress, which indicates a high sensitivity of the strain sensor. Periodic strain tests show the high stability and repeatability of the sensor. The working mechanism of the strain sensor is investigated and systematically analyzed under compressive and tensile strain. Here, we describe a strain sensor that shows a great application potential in wearable integrated circuits, in health-monitoring devices, and in artificial intelligence.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
High Temperature Characteristics of Piezoresistive Silicon Carbide Pressure Sensors Implemented by Leadless Packaging

Lukang Wang,You Zhao,Yu Yang,Yabing Wang,Yulong Zhao

DOI: https://doi.org/10.1109/sensors56945.2023.10324974

2023-01-01

Abstract:This paper presents the process of fabricating pressure sensor chip based on N-type 4H-SiC with high doping and realizing leadless packaging. The piezoresistive functional layer of the sensor is fabricated using a 4H-SiC wafer with a double epitaxial layer. The formation of the diaphragms is performed by a deep reactive ion etching (DRIE) process. The nickel-based metallization system is able to withstand high temperatures. Leadless packaging based on sintering of glass frits and nano-particle conductive silver paste realizes high temperature resistant packaging of sensor. The zero temperature drift and high temperature resistance stability lasting about 10 hours are tested at up to 600 °C.
Piezoresistive Thermal Characteristics of Aluminum-Doped P-Type 3C-Silicon Carbides

Takaya Sugiura,Naoki Takahashi,Ryohei Sakota,Kazunori Matsuda,Nobuhiko Nakano

DOI: https://doi.org/10.1109/jeds.2022.3191543

2022-07-29

IEEE Journal of the Electron Devices Society

Abstract:This study examined the temperature-related piezoresistance issues of p-type doped 3C-silicon carbide (3C-SiC) materials. Previously, we proposed piezoresistance temperature models that describe phenomena based on the ionization energies of materials oriented for high-temperature operations. This study aimed to determine the ionization energy as a function of the aluminum doping concentration of 3C-SiC. However, at the low-temperature region a drastic decrease in the piezoresistive coefficient was observed, and it was predicted to occur when materials possessing large impurity ionization energy are used under negative thermal strained conditions. This phenomenon is in contrast to the conventional piezoresistance factor that is based on narrow band-gap materials such as silicon or germanium; thus, it provides new insights into low-temperature piezoresistance phenomena.

engineering, electrical & electronic
Multi-scale numerical simulations on piezoresistivity of CNT/polymer nanocomposites

Bin Hu,Ning Hu,Yuan Li,Kentaro Akagi,Weifeng Yuan,Tomonori Watanabe,Yong Cai

DOI: https://doi.org/10.1186/1556-276X-7-402

2012-01-01

Nanoscale Research Letters

Abstract:In this work, we propose a comprehensive multi-scale three-dimensional (3D) resistor network numerical model to predict the piezoresistivity behavior of a nanocomposite material composed of an insulating polymer matrix and conductive carbon nanotubes (CNTs). This material is expected to be used as highly sensitive resistance-type strain sensors due to its high piezoresistivity defined as the resistance change ratio divided by the mechanical strain. In this multi-scale 3D numerical model, three main working mechanisms, which are well known to induce the piezoresistivity of strain sensors fabricated from nanocomposites, are for the first time considered systematically. They are (a) the change of the internal conductive network formed by the CNTs, (b) the tunneling effect among neighboring CNTs, and (c) the CNTs’ piezoresistivity. Comparisons between the present numerical results and our previous experimental ones were also performed to validate the present numerical model. The influence of the CNTs’ piezoresistivity on the total piezoresistivity of nanocomposite strain sensors is explored in detail and further compared with that of the other two mechanisms. It is found that the first two working mechanisms (i.e., the change of the internal conductive network and the tunneling effect) play a major role on the piezoresistivity of the nanocomposite strain sensors, whereas the contribution from the CNTs’ piezoresistivity is quite small. The present numerical results can provide valuable information for designing highly sensitive resistance-type strain sensors made from various nanocomposites composed of an insulating polymer matrix and conductive nanofillers.

Highly Sensitive Piezoresistance Behaviors of N-Type 3C-Sic Nanowires

Enhanced Piezoresistive Behavior of SiC Nanowire by Coupling with Piezoelectric Effect

Piezoresistance in Si3N4 nanobelts: toward highly sensitive and reliable pressure sensors

Piezoresistance Behaviors of Ultra-Strained SiC Nanowires

Piezoresistance characterization of silicon nanowires in uniaxial and isostatic pressure variation

Experimental Investigation of Piezoresistive Effect in P-Type 4H–sic

Characterization of the Piezoresistance in Highly Doped P-Type 3C-Sic at Cryogenic Temperatures

Improved piezoresistive properties of ZnO/SiC nanowire heterojunctions with an optimized piezoelectric nanolayer

P-Type 3C-Sic Nanowires and Their Optical and Electrical Transport Properties

Highly sensitive hybrid silicon carbonitride piezoresistive sensors enabled by coupling piezoelectric effect

Giant Piezoresistance in B-Doped SiC Nanobelts with a Gauge Factor of −1800

Ultrahigh sensitive piezotronic strain sensors based on a ZnSnO 3 nanowire/microwire

Giant Piezoresistance And Its Origin In Si(111) Nanowires: First-Principles Calculations

Effect of Piezoresistive Behavior on Electron Emission from Individual Silicon Carbide Nanowire

Giant Piezoresistance Measured in N-Type Nanothick Si Layer That Has Interface with $\Hbox{sio}_{2}$

Piezojunction effect in heterojunctions under external bias for ultrasensitive strain sensing

Optimal design of SiC piezoresistive pressure sensor considering material anisotropy

Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor

High Temperature Characteristics of Piezoresistive Silicon Carbide Pressure Sensors Implemented by Leadless Packaging

Piezoresistive Thermal Characteristics of Aluminum-Doped P-Type 3C-Silicon Carbides

Multi-scale numerical simulations on piezoresistivity of CNT/polymer nanocomposites