Piezoresistance in Si3N4 nanobelts: toward highly sensitive and reliable pressure sensors

jinghui bi,guodong wei,minghui shang,fengmei gao,bin tang,weiyou yang
DOI: https://doi.org/10.1039/c4tc01810a
IF: 6.4
2014-01-01
Journal of Materials Chemistry C
Abstract:To achieve precision instrumentation and accurate measurement, there is increasing need for pressure sensors to be well serviced in harsh environments. We report, for the first time, piezoresistance in single-crystalline Si3N4 nanobelts by conductive atomic force microscopy (C-AFM). The transverse electromechanical properties of the Si3N4 nanobelt were investigated under various loading forces applied by the C-AFM tip. The calculated transverse piezoresistance coefficient pi([1 (2) over bar0]) of the nanobelt was in the range of 2.2 to 8.8 x 10 (11) Pa-1 under the applied loading forces ranging from 25.6 to 135.3 nN. The relationship between the piezoresistance coefficients and the applied forces was almost linear. Significant and linear decreases in nanobelt resistance with increasing loading forces were observed, which exhibited a variation of similar to 3 M Omega with a changed force of 1 nN, implying that the pressure sensors have high sensitivity. Stable and repeatable I-V curves through multiple voltage sweepings were accomplished, suggesting that the Si3N4 nanobelts pressure sensors are quite reliable.
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