Abstract:The giant piezoresistance effect (PRE) of semiconductors as featured by a high gauge factor (GF) is recognized as the prerequisite for realizing optimal pressure sensors with desired high sensitivity. In this work, we report the discovery of giant PRE in SiC nanobelts with a record GF measured using an atomic force microscope. The transverse piezoresistance coefficient along the [111] direction reaches as high as −312.51 × 10–11 pa–1 with a corresponding GF up to −1875.1, which is twice more than the highest value ever reported on SiC nanomaterials. The first-principles calculations reveal that B doping turns the acceptor states in the bandgap into deeper impurity levels, which makes the major contribution to the observed giant piezoresistance behavior. Our result provides new insights on designing pressure sensors based on SiC nanomaterials.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c13800?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c13800</a>.Crystal structure models for calculation; HRTEM image; EDX spectrum; elemental mapping of Si and C; XPS spectrum; current within the SiC nanobelt under various compressive forces at an external bias voltage of 8 V; nanobelt resistances and applied stresses; the recorded I–V curves of two SiC nanobelts with typical thicknesses of ∼90 and ∼200 nm without applied compressive force; the relationship between the ca. piezoresistance coefficients and applied forces; piezoresistance behaviors of a single SiC nanobelt with a thickness of ∼200 nm (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c13800/suppl_file/am0c13800_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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