Abstract:This study evaluated the mechanical properties and piezoresistivity of core-shell silicon carbide nanowires (C/S-SiCNWs) synthesized by a vapor-liquid-solid (VLS) technique, which are a promising material for harsh environmental micro electromechanical systems (MEMS) applications. The C/S-SiCNWs were composed of a crystalline cubic (3C) SiC core wrapped by an amorphous silicon dioxide (SiOx) shell; however, TEM observations of the NWs showed that hexagonal polytypes (2H, 4H, and 6H) were partially induced in the core by a stacking fault owing to a Shockley partial dislocation. The stress-strain relationship of the C/S-SiCNWs and SiC cores without an SiOx shell was examined using MEMS-based nanotensile tests. The tensile strengths of the C/S-SiCNWs and SiC cores were 7.0 GPa and 22.4 GPa on average, respectively. The lower strength of the C/S-SiCNWs could be attributed to the SiOx shell with the surface roughness as the breaking point. The Young's modulus of the C/S-SiCNWs was 247.2 GPa on average, whereas that of the SiC cores had a large value with scatter data ranging from 450 GPa to 580 GPa. The geometrical model of the SiC core based on the transmission electron microscopy (TEM) observations rationalized this scatter data by the volume content of the stacking fault in the core. The piezoresistive effects of the C/S-SiCNW and SiC core were also evaluated from the I-V characteristics under uniaxial tensile strain. The gauge factor of –30.7 at 0.008 ε for the C/S-SiCNW was approximately two-times larger than that of –15.8 at 0.01 ε for the SiC core. This could be caused by an increase of the surface state density at the SiOx/SiC interface owing to the positive fixed oxide charge of the SiOx shell.

Uniaxial-stress Effects on Electronic Properties of Silicon Carbide Nanowires

Tensile Properties of Si Nanowires with Faulted Stacking Layers

Surface Stress Effects On The Yield Strength In Nanotwinned Polycrystal Face-Centered-Cubic Metallic Nanowires

Effects of Pre-Stress and Surface Stress on Phonon Thermal Conductivity of Rectangular Si Nanowires

Mechanical properties of Si nanowires as revealed by in situ transmission electron microscopy and molecular dynamics simulations.

Lattice Bending, Disordering, and Amorphization Induced Plastic Deformation in a SiC Nanowire

Effect of crystal orientation and temperature on the mechanical properties and fracture mechanism of silicon carbide nanowires

Mechanical Behaviors of MoS Nanowires under Tension from Molecular Dynamics Simulations

Nanoscale Twinning-Induced Elastic Strengthening in Silicon Carbide Nanowires

Strain engineering of core–shell silicon carbide nanowires for mechanical and piezoresistive characterizations

Effect of Different Oxide Thickness on the Bending Young'S Modulus of Sio2@Sic Nanowires

Mechanical tensile behavior-induced multi-level electronic transport of ultra-thin SiC NWs

Phase Transition and Compressibility in Silicon Nanowires

Strain/Stress-Engineering in Phonon Properties of Streesed Semiconductor Nanowires

Superior electron transport of ultra-thin SiC nanowires with one impending tensile monatomic chain

Molecular Dynamics Simulation of the Uniaxial Tensile Test of Hollow-Core Silicon Nanowires

A Molecular Dynamics Study Of The Si-Nanowire@Carbon-Nanotube Nanocomposite With Sp(3) Interfacial Bonding

Piezoresistance Behaviors of Ultra-Strained SiC Nanowires

Ab-initio Study of Size and Strain Effects on the Electronic Properties of Si Nanowires

Band-gap Modulation of Graphane-Like SiC Nanoribbons under Uniaxial Elastic Strain

Bandstructures of unstrained and strained silicon nanowire