Giant Piezoresistance Measured in N-Type Nanothick Si Layer That Has Interface with $\Hbox{sio}_{2}$

Yongliang Yang,Xinxin Li
DOI: https://doi.org/10.1109/led.2010.2098388
IF: 4.8157
2011-01-01
IEEE Electron Device Letters
Abstract:A giant piezoresistive coefficient is, for the first time, experimentally measured for n-type nanothick silicon. Compared to n-type bulk silicon, the nanothick silicon resistors exhibit at least one order of magnitude higher piezoresistive coefficient. Based on 2-D quantum confinement effect, our theoretic calculation indicates that the piezoresistive sensitivity will decrease and approach to zero, along with continually thinning the n-type silicon resistor. Thus, quantum effect is not responsible for the giant piezoresistance of the n-type nanothick silicon. By phenomenon analysis and qualitative modeling, we attribute the obtained giant piezoresistance to stress-enhanced Si/SiO2 interfacial electron-trapping effect. Hence, the giant piezoresistance in n-type nanothick silicon is dominantly originated from electron concentration change, instead of equivalent mobility change in conventional piezoresistance of bulk silicon.
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