Large Piezoelectriclike Response from Inhomogeneously Deformed Silicon Crystals

Dongxia Tian,Yu Hou,Qi Pan,Baojin Chu
DOI: https://doi.org/10.1103/physrevapplied.14.034008
IF: 4.6
2020-01-01
Physical Review Applied
Abstract:Silicon (Si) crystals are important materials for the modern microelectronics industry. While Si crystals are not piezoelectric materials due to their centrosymmetric structure, it is found in this work that Si crystals exhibit a large piezoelectric-like response under bending deformation. We show that this response is not intrinsic, but rather originates from the surfaces of crystals that are slightly oxidized upon their exposure to air. The weak piezoelectric response of the surface is amplified by high conductivity of the bulk and bending deformation of Si plates. In addition, the piezoelectric-like response is strongly dependent on the conduction type and the resistivity of the crystals and on the metal electrode used for piezoelectric measurements. A multilayer model is proposed to explain the piezoelectric-like response of the Si crystals. This finding may be exploited to design piezoelectric devices using Si only, without the integration of additional piezoelectric materials, and is important for understanding the Si crystal surfaces.
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