Abstract:The giant piezoresistance effect (PRE) of semiconductors as featured by a high gauge factor (GF) is recognized as the prerequisite for realizing optimal pressure sensors with desired high sensitivity. In this work, we report the discovery of giant PRE in SiC nanobelts with a record GF measured using an atomic force microscope. The transverse piezoresistance coefficient along the [111] direction reaches as high as −312.51 × 10–11 pa–1 with a corresponding GF up to −1875.1, which is twice more than the highest value ever reported on SiC nanomaterials. The first-principles calculations reveal that B doping turns the acceptor states in the bandgap into deeper impurity levels, which makes the major contribution to the observed giant piezoresistance behavior. Our result provides new insights on designing pressure sensors based on SiC nanomaterials.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c13800?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c13800</a>.Crystal structure models for calculation; HRTEM image; EDX spectrum; elemental mapping of Si and C; XPS spectrum; current within the SiC nanobelt under various compressive forces at an external bias voltage of 8 V; nanobelt resistances and applied stresses; the recorded I–V curves of two SiC nanobelts with typical thicknesses of ∼90 and ∼200 nm without applied compressive force; the relationship between the ca. piezoresistance coefficients and applied forces; piezoresistance behaviors of a single SiC nanobelt with a thickness of ∼200 nm (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c13800/suppl_file/am0c13800_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

The piezoresistive mobility modeling for cubic and hexagonal silicon carbide crystals

Simulation of SiO2-based Piezoresistive Microcantilevers

Giant piezoresistance of p-type nano-thick silicon induced by interface electron trapping instead of 2D quantum confinement

Experimental Investigation of Piezoresistive Effect in P-Type 4H–sic

Strain effect in highly-doped n-type 3C-SiC-on-glass substrate for mechanical sensors and mobility enhancement

Nonlinear piezoresistive effect of 4H–SiC for applications of high temperature pressure sensors

Giant Piezoresistance in B-Doped SiC Nanobelts with a Gauge Factor of −1800

Strain engineering of core–shell silicon carbide nanowires for mechanical and piezoresistive characterizations

Model Calculation of the Piezoelectric Coefficient of Hexagonal 2D Materials

Piezoelectricity and valley chern number in inhomogeneous hexagonal 2D crystals

Effect of Piezoresistive Behavior on Electron Emission from Individual Silicon Carbide Nanowire

Nuclear quantum effects in structural and elastic properties of cubic silicon carbide

Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]

Anisotropic drift diffusion model for 4H-, 6H-SiC devices simulation

Analysis of a Composite Piezoelectric Semiconductor Cylindrical Shell under the Thermal Loading

Analysis of static extension of piezoelectric semiconductor nanowires considering non-uniform strain and flexoelectric effects

Model and performance analysis of non-uniform piezoelectric semiconductor nanofibers

Mechanical Load-Induced Atomic-Scale Deformation Evolution and Mechanism of SiC Polytypes Using Molecular Dynamics Simulation

A New Anisotropic Driving Force Model for SiC Device Simulations

Establishment and Verification of Resistance Temperature Coefficient Model of P-type Non-Uniformly Doped Resistance

Full band Monte Carlo study of bulk and surface transport properties in 4H and 6H–SiC