Abstract:4H Silicon carbide (SiC) is widely recognized as one of the most advanced wide bandgap semiconductors used in the production of high-efficiency power electronic devices. Impurities play a crucial role in achieving the desired electrical properties in 4H-SiC, yet the understanding of impurities in this material remains limited. In this study, first-principles formation-energy calculations were employed to establish a comprehensive database of formation-energy diagrams for impurities in 4H-SiC. This database includes valuable information on site preference, lattice distortion, solubility, and charge transition levels (CTLs) of the impurities. The site preference for each impurity is closely related to factors such as the Fermi energy, chemical potential, and the impurity species itself. To assess the lattice distortion caused by each impurity, a comparison was made between the volume changes before and after doping. Moreover, the solubility of each impurity was determined using the detailed balance theory, thereby enabling a direct measure of the maximum impurity concentration achievable in the material. Based on the CTLs, the impurities in 4H-SiC were classified into four categories: n-type impurities, p-type impurities, amphoteric impurities, and non-electroactive impurities. This comprehensive property database for impurities in 4H-SiC provides valuable insights for tailoring the material properties through controlled doping, thereby ultimately leading to enhanced performance of power electronic devices. (c) 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).

Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]

Monte Carlo study of electron transport in SiC

Full band Monte Carlo study of bulk and surface transport properties in 4H and 6H–SiC

An Ensemble Monte Carlo Study of Electron Transport in Nitrogen-Doped 4H-SiC

Monte Carlo Simulation of Electron Transport in Silicon Carbide

Spice modeling of 4H-SiC MOSFET based on the advanced mobility model

Anisotropic drift diffusion model for 4H-, 6H-SiC devices simulation

Experimental and theoretical study on anisotropic electron mobility in 4H‐SiC

Modeling of carrier scattering in MOS inversion layers with large density of interface states and simulation of electron Hall mobility in 4H-SiC MOSFETs

Phonon-limited carrier mobilities and Hall factors in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:mrow></mml:math> -SiC from first principles

Free electron density and mobility in high-quality 4H–SiC

Electronic Transport in the Silicon Carbide Semiconductor in Phase 3C

Impurities in 4H Silicon Carbide: Site Preference, Lattice Distortion, Solubility, and Charge Transition Levels

MONTE CARLO MODEL FOR ELECTRON TRANSPORT IN THE MATERIAL 3C-Sic

Electron mobility along 〈0001〉 and 〈11̅00〉 directions in 4H-SiC over a wide range of donor concentration and temperature

Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis

Physical Analysis and Modeling of the Nonlinear Miller Capacitance for SiC MOSFET.

SiC devices: physics and numerical simulation

Channel Electron Mobility in 4h–sic Lateral Junction Field Effect Transistors

Feasibility Analysis of Establishing a Physical Model of Radiation Effects from SiC to Device

Hall Mobility in N-Type 4H-Sic: Calculation Using Hydrodynamic Balance Equations