Abstract:Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) devices exhibit substantial prospects for application under extreme operational conditions, including elevated temperatures, high voltages, and high frequencies. Nevertheless, owing to their distinctive material and structural attributes, SiC MOSFET devices are not devoid of challenges, with the short-circuit phenomenon constituting a pivotal avenue of inquiry. The short-circuit effect pertains to the abrupt escalation of leakage current that these devices might undergo under elevated voltage conditions, thereby exerting a perturbing influence on their stability and reliability. Investigations into the short-circuit effect predominantly revolve around two dimensions: one involves comprehending its underlying physical mechanisms, while the other centers on identifying commensurate remedial approaches.With respect to the underlying physical mechanisms, researchers have discerned that the elevated breakdown field strength and augmented carrier mobility intrinsic to SiC materials engender an augmentation in leakage current, consequently giving rise to the short-circuit effect. Furthermore, factors such as oxide layer anomalies and surface states are also conceivable catalysts for the surge in leakage current. To rectify this predicament, scholars have proffered a panoply of stratagems, encompassing the optimization of material synthesis processes, enhancement of oxide layer quality, refinement of device structural designs, and incorporation of protective circuitry, among others. In summation, the investigation of the short-circuit effect in silicon carbide MOSFET devices is fundamentally aimed at attaining an in-depth comprehension of its causative mechanisms. Moreover, it endeavors to proffer efficacious resolutions conducive to augmenting the reliability and steadfastness of these devices within high-temperature and high-voltage environments, thereby facilitating their widespread integration within the ambit of high-performance power electronics.

Feasibility Analysis of Establishing a Physical Model of Radiation Effects from SiC to Device

Physical Analysis and Modeling of the Nonlinear Miller Capacitance for SiC MOSFET.

Analytical Modeling of the Silicon Carbide (sic) MOSFET During Switching Transition for EMI Investigation

Analytical Modeling of SiC MOSFET During Switching Transient

A Temperature-Dependent Analytical Model of SiC MOSFET Short-Circuit Behavior Considering Parasitic Parameters

Establishment and Simulation Analysis of SiC MOSFET SPICE Model

A Compact Circuit-Level Model for Single-Event Burnout in SiC Power MOSFET Devices

Analytical Modeling Of Switching Characteristics Of The Sic Mosfet Based On Finite State Machine

A Behavior Model of SiC DMOSFET Considering Thermal-Runaway Failures in Short-Circuit and Avalanche Breakdown Faults

An Accurate and Effective Spice Model of 6.5kv SiC MOSFET with Parasitic Parameters Analysis in Medium-Voltage Power Module

A Comparative Study of Single-Event-Burnout for 4H-SiC UMOSFET

Spice modeling of 4H-SiC MOSFET based on the advanced mobility model

Modelling and Failure Analysis of SiC MOSFET under the Effects of Parasitic Parameters

An investigation into the short-circuit characteristics of Sic MOSFET power devices

Modeling of SiC MOSFET Behavior in Short-circuit Transient Considering Gate Leakage Current

Modeling of Sic Mosfet in Matlab/Simulink

A Temperature-Dependent Pspice Short-Circuit Model Of Sic Mosfet

Analysis and Modeling of Temperature Dependence of I-V behavior in Silicon Carbide MOSFETs

Electro-Thermal Coupling Characteristics and Modeling of SiC MOSFET Modules under High Pulse Current Conditions

Circuit model of SiC MOSFET and application

SiC devices: physics and numerical simulation