Abstract:Fully depleted (FD) silicon-on-insulator (SOI) nMOSFETs fabricated using 0.2-mu m SOI technology with external body contact (EBC) and floating body (FB) structures are irradiated up to 500 krad(Si) using 60Co gamma rays under the transmission gate (TG) and OFF bias conditions, respectively. The threshold voltage shift of the back transistors due to radiation-induced charge trapping in the buried oxide (BOX) is used to characterize the total dose response of irradiated back transistors. The results indicate that, overall, the TG biased EBC transistors with various gate lengths are more sensitive to the total dose radiation than the OFF biased FB counterparts at low dose levels. Furthermore, for the shorter gate transistors with a supply voltage of 1.8 V, a relatively complex correlation exists between the total dose response and the gate length. In particular, the back transistor of the TG biased 0.20-mu m 1.8-V EBC transistor reveals smaller threshold voltage shifts than the OFF biased counterpart at approximately 500 krad(Si) because of the saturation of its threshold shift with increased doses, and a similar radiation response is observed for the TG biased 0.35-mu m EBC transistor with a supply voltage of 2.5 V. We found that the 2.5-V back transistors exhibited greater radiation hardness than the 1.8-V counterparts with the same bias configuration in most cases.

A Short-Channel SOI MOSFET Model Considering Total Dose Effects

A Stabilized Numerical Scheme to Simulate Synergistic Effect of TID and TDR in Semiconductor Devices

A Phenomenological MOSFET Model Including Total Dose Radiation Effects at a High Total Dose

A New Threshold Voltage Shift Model Due to Radiation in Fully-Depleted SOI MOSFET

A Model for Radiation-Induced Off-State Leakage Current in N-channel Metal-Oxide-semiconductor Transistors with Shallow Trench Isolation

Shift of Transitions Between Partially and Fully-Depleted Behavior in SOI MOSFET due to Radiation

Radiation of SOI MOSFET with Shallow Source

Fully depleted short-channel SOI LDD/LDS MDSFET model for VLSI circuits analysis

A Unified Charge-Based Model for SOI MOSFETs Applicable from Intrinsic to Heavily Doped Channel

Total Dose Γ-Ray Radiation Characteristics of P-channel MOSFET/FIPOS

Improved Model on Buried-Oxide Damage Induced by Total-Ionizing-Dose Effect for HV SOI LDMOS

Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies

An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-Nm PDSOI I/O Nmosfets

Comparison of the Total Dose Responses of Fully Depleted SOI Nmosfets with Different Geometries for the Worst Case Bias Conditions

Simulation of Suppression of Floating-Body Effect in Partially Depleted SOI MOSFET Using a Si1−xGex Dual Source Structure

Physical Model for Ionizing Radiation Damage in Partially Depleted SOI Transistors

A physical model of floating body effects in fully depleted silicon-on-insulator nMOSFET

A noncharge-sheet channel potential and drain current model for dynamic-depletion silicon-on-insulator metal-oxide-semiconductor field-effect transistors

A Special Total-Ionizing-Dose-Induced Short Channel Effect in Thin-Film PDSOI Technology: Phenomena, Analyses, and Models

A Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-on-Insulator ( UTB-SOI ) MOSFETs

Investigation of Unique Total Ionizing Dose Effects in 0.2 um Partially-Depleted Silicon-on-Insulator Technology