Abstract:In this paper, the novel Quasi-SOI CMOS architecture is fabricated based on bulk Si substrate for the first time. The whole fabrication is basically compatible with the conventional CMOS technology. The path of the draininduced barrier lowering (DIBL) effect can be effectively suppressed by the "L-Type" insulator surrounding the source and drain in Quasi-SOI MOSFET. Such device structure can effectively suppress the short-channel effects (SCEs) and prevent the transistor from the bulk punch-through. The leakage current will not increase with the high doping concentration of the substrate due to the absence of P/N junctions surrounding the S/D regions which brings more flexibility on the modulation of the threshold voltage. Moreover, the influence of process-induced variations on the new transistor performance and implications for manufacturing processes comparing with UTB SOI MOSFET are also studied by simulations in order to investigate the sensitivity of the important characteristics to the device crucial physical parameter fluctuations introduced by the process. The results show that Quasi-SOI MOSFET can be more tolerant of process-induced variation for the deep nanometer scale regime. The highly manufacturable Quasi-SOI MOSFET which can combine the advantages of ultra-thin body (UTB) SOI MOSFET and bulk silicon device can be considered as a promising candidate for highly scaled devices.

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Floating Body Effect in Partially Depleted SOI nMOSFET with Asymmetric Structure and Ge-Implantation

Simulation Study of Device Physics Issues in III&#x2013;V MOSFETs at 10 Nm Node

A physical model of floating body effects in fully depleted silicon-on-insulator nMOSFET

The Simulation Analysis of Thick Film Fully Depleted SOI MOSFET Implemented by Anti-Doped Silicon Island

A Novel Salicide Body-Contacted Structure for Partially Depleted SOI Nmosfets

Analysis and Suppression for Gate Oscillation Caused by Body Diodes on Paralleled SiC MOSFETs Application

Experimental Results on Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

A Short-Channel SOI MOSFET Model Considering Total Dose Effects

Radiation of SOI MOSFET with Shallow Source

4H-Sic Trench Gate Lateral MOSFET with Deep-Shallow Source Trench for Improved RESURF Dose Window and Reduced Oxide Field

A study of source/drain-on-insulator structure for extremely scaled MOSFETs

Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

Experimental investigation of Quasi-SOI MOSFET for highly scaled devices

Novel Localized-SOI MOSFET's Combining the Advantages of SOI and Bulk Substrates for Highly-Scaled Devices

On the Performance of Single-Gated Ultrathin-Body SOI Schottky-barrier MOSFETs

Substrate Effect on Radiation-Induced Charge Trapping in Buried Oxide for Partially-Depleted SOI NMOSFET

Analysis and Optimization of SDOI Structure to Maximize the Intrinsic Performance of Extremely Scaled MOSFETs

The analysis of the anomalous hot-carrier effect in partially depleted SOI pMOSFETs fabricated on modified wafer