Abstract:In this paper, the novel Quasi-SOI CMOS architecture is fabricated based on bulk Si substrate for the first time. The whole fabrication is basically compatible with the conventional CMOS technology. The path of the draininduced barrier lowering (DIBL) effect can be effectively suppressed by the "L-Type" insulator surrounding the source and drain in Quasi-SOI MOSFET. Such device structure can effectively suppress the short-channel effects (SCEs) and prevent the transistor from the bulk punch-through. The leakage current will not increase with the high doping concentration of the substrate due to the absence of P/N junctions surrounding the S/D regions which brings more flexibility on the modulation of the threshold voltage. Moreover, the influence of process-induced variations on the new transistor performance and implications for manufacturing processes comparing with UTB SOI MOSFET are also studied by simulations in order to investigate the sensitivity of the important characteristics to the device crucial physical parameter fluctuations introduced by the process. The results show that Quasi-SOI MOSFET can be more tolerant of process-induced variation for the deep nanometer scale regime. The highly manufacturable Quasi-SOI MOSFET which can combine the advantages of ultra-thin body (UTB) SOI MOSFET and bulk silicon device can be considered as a promising candidate for highly scaled devices.

The Simulation Analysis of Thick Film Fully Depleted SOI MOSFET Implemented by Anti-Doped Silicon Island

Simulation for a Novel Vertical SOI Configuration

Two-dimensional model of fully depleted dual-material-gate single-halo SOI MOSFET

Simulation of Suppression of Floating-Body Effect in Partially Depleted SOI MOSFET Using a Si1−xGex Dual Source Structure

Analysis and Optimization of SDOI Structure to Maximize the Intrinsic Performance of Extremely Scaled MOSFETs

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

Design Optimization of High Performance Strained SOI Dynamic Threshold MOSFET's

Simulation of a Novel Schottky Body-Contacted Structure Suppressing Floating Body Effect in Partially-Depleted SOI nMOSFET's

A study of source/drain-on-insulator structure for extremely scaled MOSFETs

Fully depleted short-channel SOI LDD/LDS MDSFET model for VLSI circuits analysis

Suppress of Substrate-Assisted Depletion Effects in Super Junction LDMOS on Thin Film SOI

Analytic subthreshold slope model for deep-submicrometer fully depleted SOI MOSFET's

A Novel Fully-Depleted Dual-Gate MOSFET

Analytical Model and Optimization for SiC Floating Island Structure

Two-Dimensional Analytic Model for Fully Depleted Surrounding Gate Metal-Oxide-Semiconductor Field-Effect Transistor

Fully depleted SOI devices with TiN gate and elevated source-drain structures

Analysis of Off-State and On-State Performance in A Silicon-On-Insulator Power Mosfet with A Low-K Dielectric Trench

Experimental investigation of Quasi-SOI MOSFET for highly scaled devices

0.25 Mm SOI RF nMOSFETs depleted partially

Improved Super Junction LDMOS Transistors on Thin Film SOI to Suppress Substrate-assisted Depletion Effects

Novel Localized-SOI MOSFET's Combining the Advantages of SOI and Bulk Substrates for Highly-Scaled Devices