Abstract:In this paper two kinds of novel localized-SOI structure devices, named as Quasi-SOI MOSFET and source-drain -on-nothing(SDON)/source-drain-on-insulator (SDOI) MOSFET, are demonstrated which can combine the advantages of SOI and bulk substrates. In the Quasi-SOI structure with the source/drain regions quasi-surrounded with insulator and the channel region directly connected with the bulk substrate, short channel effects (SCE), parasitic capacitance and self-heating effects (SHE) can be effectively reduced. The problem of degraded mobility and increased threshold voltage due to ultra-thin body in UTB SOI MOSFET's can also be solved. A method to fabricate the Quasi-SOI MOSFET is put forward. Process-device co-simulation results further show good scaling capability and excellent heat dissipation of the Quasi-SOI devices. In the SDON/SDOI device with the recessed S/D extension regions and source-drain staying on the partially buried layers, the advantages of quasi-SOI MOSFET can be maintained with the parasitic capacitance further reduced and the fabrication technology basically compatible with the standard CMOS technology. The proposed two structures can be considered as good candidates for highly-scaled devices.

Simulation of a Novel Schottky Body-Contacted Structure Suppressing Floating Body Effect in Partially-Depleted SOI nMOSFET's

Simulation for a Novel Vertical SOI Configuration

A Novel Salicide Body-Contacted Structure for Partially Depleted SOI Nmosfets

Simulation of Suppression of Floating-Body Effect in Partially Depleted SOI MOSFET Using a Si1−xGex Dual Source Structure

Floating Body Effect in Partially Depleted SOI nMOSFET with Asymmetric Structure and Ge-Implantation

Eliminating the Floating-Body Effects in a Novel CMOS-compatible Thin-Soi LDMOS

Novel Schottky Barrier Mosfet with Dual-Layer Silicide Source/Drain Structure

The Simulation Analysis of Thick Film Fully Depleted SOI MOSFET Implemented by Anti-Doped Silicon Island

A novel MOSFET structure with asymmetric Schottky and P-N junction source/drain on bulk silicon substrate

A physical model of floating body effects in fully depleted silicon-on-insulator nMOSFET

Schottky Barrier Mosfet Structure with Silicide Source/Drain on Buried Metal

Experimental Investigation on the Back-Gate Modulation of Extra-Thin Body Pmosfets

A study of source/drain-on-insulator structure for extremely scaled MOSFETs

T-Shaped Body Silicon-on-Insulator (SOI) MOSFET

Novel Localized-SOI MOSFET's Combining the Advantages of SOI and Bulk Substrates for Highly-Scaled Devices

A Novel Deep-Trench Super-Junction SiC MOSFET with Improved Specific On-Resistance

A Novel Super-Junction DT-MOS with Floating p Regions to Improve Short-Circuit Ruggedness

Radiation of SOI MOSFET with Shallow Source

Design and optimization of a novel SOI LDMOS structure using PIN junction

An elevated source/drain-on-insulator structure to maximize the intrinsic performance of extremely scaled MOSFETs

4H-SiC UMOSFET With an Electric Field Modulation Region Below P-Body