Abstract:In this paper two kinds of novel localized-SOI structure devices, named as Quasi-SOI MOSFET and source-drain -on-nothing(SDON)/source-drain-on-insulator (SDOI) MOSFET, are demonstrated which can combine the advantages of SOI and bulk substrates. In the Quasi-SOI structure with the source/drain regions quasi-surrounded with insulator and the channel region directly connected with the bulk substrate, short channel effects (SCE), parasitic capacitance and self-heating effects (SHE) can be effectively reduced. The problem of degraded mobility and increased threshold voltage due to ultra-thin body in UTB SOI MOSFET's can also be solved. A method to fabricate the Quasi-SOI MOSFET is put forward. Process-device co-simulation results further show good scaling capability and excellent heat dissipation of the Quasi-SOI devices. In the SDON/SDOI device with the recessed S/D extension regions and source-drain staying on the partially buried layers, the advantages of quasi-SOI MOSFET can be maintained with the parasitic capacitance further reduced and the fabrication technology basically compatible with the standard CMOS technology. The proposed two structures can be considered as good candidates for highly-scaled devices.

Eliminating the Floating-Body Effects in a Novel CMOS-compatible Thin-Soi LDMOS

Simulation for a Novel Vertical SOI Configuration

Simulation of a Novel Schottky Body-Contacted Structure Suppressing Floating Body Effect in Partially-Depleted SOI nMOSFET's

Floating Body Effect in Partially Depleted SOI nMOSFET with Asymmetric Structure and Ge-Implantation

Characterization of DC, Analog/rf, and Low Frequency Noise in Silicon-on-insulator Nmosfets with Different Body-Contact Structures

A Novel Salicide Body-Contacted Structure for Partially Depleted SOI Nmosfets

Design and optimization of a novel SOI LDMOS structure using PIN junction

Experimental Results on Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

A Novel Drain Source On Insulator (Dsoi) Structure To Fully Suppress The Floating-Body And Self-Heating Effects

A physical model of floating body effects in fully depleted silicon-on-insulator nMOSFET

Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

A new self-aligned BOI (Body-on-insulator) finfet fabricated on bulk SI wafers

T-Shaped Body Silicon-on-Insulator (SOI) MOSFET

Novel Localized-SOI MOSFET's Combining the Advantages of SOI and Bulk Substrates for Highly-Scaled Devices

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

Simulation of Suppression of Floating-Body Effect in Partially Depleted SOI MOSFET Using a Si1−xGex Dual Source Structure

SOI LDMOS With High-k Multi-Fingers to Modulate the Electric Field Distributions

A High-k LDMOS Improved by Floating Field Plates for Enhanced Cost Performance and Robustness

A Novel Nanoscaled Device Concept: Quasi-Soi MOSFET to Eliminate the Potential Weaknesses of UTB SOI MOSFET

A Novel Substrate-Optimized GGNMOS for Low-Voltage ESD Protection in 65 nm CMOS Process

Abnormal Off-State Leakage Current Increasing with Reduced Silicon Body Thickness in Nano-Soi Devices