Abstract:In this work, the intentional insertion of slots in metal gate (MG) is introduced to solve the dishing issue for the double-diffused drain MOSFET (DDDMOSFET) fabrication. For traditional DDDMOSFET, the gate oxide layer in slots will be reserved to improve the device reliability, which requires an additional photomask to screen the gate/slot regions during the following sidewall formation and source/drain (S/D) implantation. This makes the process more complicated with increased cost. Without that additional photomask, it is proposed that the removal of gate oxide layer in slots can directly allow the floating S/D formation and the followed Ni silicidation there. It is demonstrated that such a novel process can not only relieve the MG dishing issue but can also effectively result in ~16% higher ON current and comparable OFF current for both N- and P-DDDMOSFETs without threshold voltage shift after applying electrical stress on gates. It is also revealed that the floating silicided S/Ds in slots have negligible influence on device breakdown characteristics. By saving one photomask, this work proposes a novel solution for the effective integration of core devices with very small feature sizes and high-voltage (HV) devices with large feature sizes in the same die, which is a common challenge for display driver chip fabrication using high- ${k}$ /MG (HK/MG) technology.

Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

Experimental Results on Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

Comparison of the Characteristics of DSOI, SOI and Bulk-Si MOSFETs

Fabrication Of Self-Aligned Drain And Source On Insulator Mosfet With Dielectric Pocket By Local Simox Technology

Novel Localized-SOI MOSFET's Combining the Advantages of SOI and Bulk Substrates for Highly-Scaled Devices

Investigation of Thermal Property of Novel DSOI MOSFETs Fabricated with Local SIMOX Technique

A Novel Drain Source On Insulator (Dsoi) Structure To Fully Suppress The Floating-Body And Self-Heating Effects

Reliability Improvements in SOI-like MOSFET with ESD and Self-Heating Effect

Super Junction LDMOS with P-trench and Stepped Buried Oxide Layer for High Performance

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

Extra Source Implantation for Suppression Floating-Body Effect in Partially Depleted SOI MOSFETs

Patterned Buried Oxide Layers under A Single Mosfet to Improve the Device Performance

A study of source/drain-on-insulator structure for extremely scaled MOSFETs

An elevated source/drain-on-insulator structure to maximize the intrinsic performance of extremely scaled MOSFETs

An Improved SOI LDMOS with Buried Field Plate

A Simulation Study of Soi-Like Bulk Silicon Mosfet with Improved Performance

DDDMOSFET Performance Improvement by Gate Oxide Removal Followed by Silicided Source/Drain Formation in Gate Slots

Channel Design of Silicon-On-Insulator (soi) Mosfet for Low-Voltage Low-Power Application

TDBC SOI Technology to Suppress Floating Body Effect in PD SOI P-Mosfets

A Tunnel Diode Body Contact Structure to Suppress the Floating-Body Effect in Partially Depleted SOI MOSFETs

A Tunnel Diode Body Contact Structure for High-Performance SOI MOSFETs