Abstract:In this work, the intentional insertion of slots in metal gate (MG) is introduced to solve the dishing issue for the double-diffused drain MOSFET (DDDMOSFET) fabrication. For traditional DDDMOSFET, the gate oxide layer in slots will be reserved to improve the device reliability, which requires an additional photomask to screen the gate/slot regions during the following sidewall formation and source/drain (S/D) implantation. This makes the process more complicated with increased cost. Without that additional photomask, it is proposed that the removal of gate oxide layer in slots can directly allow the floating S/D formation and the followed Ni silicidation there. It is demonstrated that such a novel process can not only relieve the MG dishing issue but can also effectively result in ~16% higher ON current and comparable OFF current for both N- and P-DDDMOSFETs without threshold voltage shift after applying electrical stress on gates. It is also revealed that the floating silicided S/Ds in slots have negligible influence on device breakdown characteristics. By saving one photomask, this work proposes a novel solution for the effective integration of core devices with very small feature sizes and high-voltage (HV) devices with large feature sizes in the same die, which is a common challenge for display driver chip fabrication using high- ${k}$ /MG (HK/MG) technology.

Fabrication Of Self-Aligned Drain And Source On Insulator Mosfet With Dielectric Pocket By Local Simox Technology

Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

Experimental Results on Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

DDDMOSFET Performance Improvement by Gate Oxide Removal Followed by Silicided Source/Drain Formation in Gate Slots

An elevated source/drain-on-insulator structure to maximize the intrinsic performance of extremely scaled MOSFETs

Analysis and Optimization of SDOI Structure to Maximize the Intrinsic Performance of Extremely Scaled MOSFETs

Design and evaluation of press-pack SiC MOSFET

Patterned Buried Oxide Layers under A Single Mosfet to Improve the Device Performance

A study of source/drain-on-insulator structure for extremely scaled MOSFETs

Novel Localized-SOI MOSFET's Combining the Advantages of SOI and Bulk Substrates for Highly-Scaled Devices

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

Fabrication and Optimization of a High Speed Deep-Trench Super-Junction MOSFET with Improved EMI Performance

A Novel Self-Aligned Dopant-Segregated Schottky Tunnel-FET with Asymmetry Sidewall Based on Standard CMOS Technology

A Viable Self-aligned Bottom-Gate MOSFET Technology for High Density and Low Voltage SRAM

Self-align Recessed Source Drain Ultrathin Body SOI MOSFET

Investigation of Thermal Property of Novel DSOI MOSFETs Fabricated with Local SIMOX Technique

Design and optimization of a novel SOI LDMOS structure using PIN junction

On Different Process Schemes for MOSFETs with a Controllable NiSi-Based Metallic Source/Drain

A Novel Source/drain on Void (SDOV) MOSFET Implemented by Local Co-Implantation of Hydrogen and Helium

Silicide As Diffusion Source For Dopant Segregation In 70-Nm Mosfets With Ptsi Schottky-Barrier Source/Drain On Ultrathin-Body Soi

A Novel Drain Source On Insulator (Dsoi) Structure To Fully Suppress The Floating-Body And Self-Heating Effects