Abstract:In this paper, the novel Quasi-SOI CMOS architecture is fabricated based on bulk Si substrate for the first time. The whole fabrication is basically compatible with the conventional CMOS technology. The path of the draininduced barrier lowering (DIBL) effect can be effectively suppressed by the "L-Type" insulator surrounding the source and drain in Quasi-SOI MOSFET. Such device structure can effectively suppress the short-channel effects (SCEs) and prevent the transistor from the bulk punch-through. The leakage current will not increase with the high doping concentration of the substrate due to the absence of P/N junctions surrounding the S/D regions which brings more flexibility on the modulation of the threshold voltage. Moreover, the influence of process-induced variations on the new transistor performance and implications for manufacturing processes comparing with UTB SOI MOSFET are also studied by simulations in order to investigate the sensitivity of the important characteristics to the device crucial physical parameter fluctuations introduced by the process. The results show that Quasi-SOI MOSFET can be more tolerant of process-induced variation for the deep nanometer scale regime. The highly manufacturable Quasi-SOI MOSFET which can combine the advantages of ultra-thin body (UTB) SOI MOSFET and bulk silicon device can be considered as a promising candidate for highly scaled devices.

A study of source/drain-on-insulator structure for extremely scaled MOSFETs

Analysis and Optimization of SDOI Structure to Maximize the Intrinsic Performance of Extremely Scaled MOSFETs

An elevated source/drain-on-insulator structure to maximize the intrinsic performance of extremely scaled MOSFETs

Simulation for a Novel Vertical SOI Configuration

Strain Optimization in Silicon P-Type Double-Gate MOSFET at 7nm Channel Length

An Optimized Structure of 4H-Sic U-Shaped Trench Gate Mosfet

Novel Localized-SOI MOSFET's Combining the Advantages of SOI and Bulk Substrates for Highly-Scaled Devices

A Simulation Study of Soi-Like Bulk Silicon Mosfet with Improved Performance

Experimental investigation of Quasi-SOI MOSFET for highly scaled devices

Super Junction LDMOS with P-trench and Stepped Buried Oxide Layer for High Performance

Recessed source/drain for scaling SOI MOSFET to the limit

Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

Source/Drain Series Resistances of Nanoscale Ultra-Thin-Body Soi Mosfets with Undoped or Very-Low-Doped Channel Regions

High-<formula formulatype="inline"><tex Notation="TeX">$\kappa$</tex></formula>/Metal-Gate Fully Depleted SOI CMOS With Single-Silicide Schottky Source/Drain With Sub-30-nm Gate Length

Experimental Results on Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

4H-Sic Trench Gate Lateral MOSFET with Deep-Shallow Source Trench for Improved RESURF Dose Window and Reduced Oxide Field

Extra Source Implantation for Suppression Floating-Body Effect in Partially Depleted SOI MOSFETs

Design Optimization of High Performance Strained SOI Dynamic Threshold MOSFET's

High performance 4H-SiC MOSFET with deep source trench

The Influence of Source and Drain Junction Depth on the Sub-50Nm MOSFET Devices

DDDMOSFET Performance Improvement by Gate Oxide Removal Followed by Silicided Source/Drain Formation in Gate Slots