Abstract:A 1200V 4H-SiC lateral double-diffused MOSFET (LDMOS) featuring a lightly doped P-top layer at the source side, and a high-doped N-well layer arranged between the channel and P-top layer is proposed. In order to promote the simulation accuracy, Sentaurus Process Tool that can simulate the oxidation, ion implantation, annealing, diffusion, etc. is used for structure establishment in this letter. In the ON-state, the electric potential at the end of the channel can be modulated and lowered due to the existence of P-top layer. The P-top layer can shield the voltage from the drain side, which results in the reduced saturation current ( $text{I}_{text {dsat}}$ ), especially at high drain-source voltage ( $text{V}_{text {DS}}$ ). The introduction of the N-well layer ensures that the P-top layer has almost no impact on the linear current ( $text{I}_{text {dlin}}$ ). Compared with the conventional SiC LDMOS, the $text{I}_{text {dsat}}$ at $text{V}_{text {DS}},,=400text{V}$ of the proposed LDMOS decreases by 24.2% with no degradation in the $text{I}_{text {dlin}}$ and the OFF-state breakdown voltage (BV). Benefiting from the suppressed $text{I}_{text {dsat}}$ , the proposed SiC LDMOS achieves a ON-state BV 366V higher than that of the conventional SiC LDMOS at the gate-source voltage of 20V. Since the short-circuit capability of the SiC power devices is much sensitive to the $text{I}_{text {dsat}}$ -/tex-math>, the 24.2% reduction in $text{I}_{text {dsat}}$ can predict a considerable enhanced short-circuit capability. Simulation results show that the short-circuit withstand time can be improved by 105%.

An elevated source/drain-on-insulator structure to maximize the intrinsic performance of extremely scaled MOSFETs

A study of source/drain-on-insulator structure for extremely scaled MOSFETs

Analysis and Optimization of SDOI Structure to Maximize the Intrinsic Performance of Extremely Scaled MOSFETs

Simulation for a Novel Vertical SOI Configuration

Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

Recessed source/drain for scaling SOI MOSFET to the limit

Experimental Results on Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

DDDMOSFET Performance Improvement by Gate Oxide Removal Followed by Silicided Source/Drain Formation in Gate Slots

Experimental investigation of Quasi-SOI MOSFET for highly scaled devices

Schottky Barrier Mosfet Structure with Silicide Source/Drain on Buried Metal

Novel Localized-SOI MOSFET's Combining the Advantages of SOI and Bulk Substrates for Highly-Scaled Devices

4H-Sic Trench Gate Lateral MOSFET with Deep-Shallow Source Trench for Improved RESURF Dose Window and Reduced Oxide Field

4H-Sic Trench Gate Lateral MOSFET with Dual Source Trenches for Improved Performance and Reliability

Fabrication Of Self-Aligned Drain And Source On Insulator Mosfet With Dielectric Pocket By Local Simox Technology

An Improved Structure to Enhance the Robustness of SiC Power MOSFETs for a Low Ron, Sp

Self-align Recessed Source Drain Ultrathin Body SOI MOSFET

SiC Trench MOSFET with Reduced Switching Loss and Increased Short-Circuit Capability

Performance Analyses of Planar Schottky Barrier MOSFETs with Dual Silicide Layers at Source/Drain on Bulk Substrates and Material Studies of ErSix/CoSi2/Si Stack Interface

High performance 4H-SiC MOSFET with deep source trench

A planar asymmetric Schottky barrier source/drain structure for nano-scale MOSFETs

Simulation Study of A 1200V 4H-SiC Lateral MOSFET With Reduced Saturation Current