Abstract:This work has a focus on NiSi as a possible metallic contact for aggressively scaled complementary metal oxide semiconductor devices. As the bulk work function of NiSi lies close to the middle of Si bandgap, the Schottky barrier height (SBH) of NiSi is rather large for both electron (similar to 0.65 eV) and hole (similar to 0.45 eV). Different approaches have therefore been intensively investigated in the literature aiming at reducing the effective SBH: dopant segregation (DS), surface passivation (SP), and alloying, in order to improve the carrier injection into the conduction channel of a field-effect transistor. The present work explores DS using B and As for the NiSi/Si contact system. The effects of C and N implantation into Si substrate prior to the NiSi formation are examined, and it is found that the presence of C yields positive effects in helping reduce the effective SBH to 0.1-0.2 eV for both conduction polarities. A combined use of DS or SP with alloying could be considered for more effective control of effective SBH, but an examination of undesired compound formation and its probable consequences is necessary. Furthermore, an analysis of the metal silicides that have a small "intrinsic" SBH reveals that only a very small number of them are of practical interest as most of the silicides require either a high formation temperature or possess a high specific resistivity.

Silicide As Diffusion Source For Dopant Segregation In 70-Nm Mosfets With Ptsi Schottky-Barrier Source/Drain On Ultrathin-Body Soi

SB-MOSFETs in UTB-SOI Featuring PtSi Source/Drain With Dopant Segregation

Effective Schottky Barrier Lowering in Silicon-on-insulator Schottky-barrier Metal-Oxide-semiconductor Field-Effect Transistors Using Dopant Segregation

Role of Si Implantation in Control of Underlap Length in Schottky-barrier Source/drain MOSFETs on Ultrathin Body SOI

Characterization Of Dopant Segregated Schottky Barrier Source/Drain Contacts

Fully Depleted UTB and Trigate N-Channel MOSFETs Featuring Low-Temperature PtSi Schottky-Barrier Contacts with Dopant Segregation

On Different Process Schemes for MOSFETs with a Controllable NiSi-Based Metallic Source/Drain

Schottky Barrier Height Tuning Via Nickel Silicide As Diffusion Source Dopant Segregation Scheme with Microwave Annealing

A Comparative Study of Two Different Schemes to Dopant Segregation at NiSi/Si and PtSi/Si Interfaces for Schottky Barrier Height Lowering

Schottky Barrier Mosfet Structure with Silicide Source/Drain on Buried Metal

Thermal Stability Enhancement of NiGe Metal Source/Drain and Ge Pmosfets by Dopant Segregation

Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing.

Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing

Novel Schottky Barrier Mosfet with Dual-Layer Silicide Source/Drain Structure

The Modulation of Schottky Barrier Height of NiSi/n-Si Schottky Diodes by Silicide As Diffusion Source Technique

Towards Schottky-Barrier Source/Drain Mosfets

Schottky Barrier Height Tuning Via The Dopant Segregation Technique Through Low-Temperature Microwave Annealing

A planar asymmetric Schottky barrier source/drain structure for nano-scale MOSFETs

Interaction of NiSi with dopants for metallic source/drain applications

A Computational Study of Dopant-Segregated Schottky Barrier MOSFETs

A Computational Study of Dopant-Segregated