Abstract:Molybdenum disulfide (MoS 2 ) is a representative two-dimensional layered transition-metal dichalcogenide semiconductor. Layer-number-dependent electronic properties are attractive in the development of nanomaterial-based electronics for a wide range of applications including sensors, switches, and amplifiers. MoS 2 field-effect transistors (FETs) have been studied as promising future nanoelectronic devices with desirable features of atomic-level thickness and high electrical properties. When a naturally n-doped MoS 2 is contacted with metals, a strong Fermi-level pinning effect adjusts a Schottky barrier and influences its electronic characteristics significantly. In this study, we investigate multilayer MoS 2 Schottky barrier FETs (SBFETs), emphasizing the metal-contact impact on device performance via computational device modeling. We find that p-type MoS2 SBFETs may be built with appropriate metals and gate voltage control. Furthermore, we propose ambipolar multilayer MoS2 SBFETs with asymmetric metal electrodes, which exhibit gate-voltage dependent ambipolar transport behavior through optimizing metal contacts in MoS2 device. Introducing a dual-split gate geometry, the MoS 2 SBFETs can further operate in four distinct configurations: p − p, n − n, p − n, and n − p. Electrical characteristics are calculated, and improved performance of a high rectification ratio can be feasible as an attractive feature for efficient electrical and photonic devices.

A Computational Study of Dopant-Segregated Schottky Barrier MOSFETs

A Computational Study of Dopant-Segregated

Impact Of Gate Misalignment On The Performance Of Dopant-Segregated Schottky Barrier Mosfets

Comparative Study of Dopant-Segregated Schottky Barrier Germanium Nanowire Transistors

Effective Schottky Barrier Lowering in Silicon-on-insulator Schottky-barrier Metal-Oxide-semiconductor Field-Effect Transistors Using Dopant Segregation

Comparative Study of Tunnel Field Effect Transistors with Dopant-Segregated Schottky Source/Drain

Origin of High On-State Current for Dopant-Segregated Schottky MOSFET.

A Monte Carlo Study of Ambipolar Schottky Barrier MOSFETs

Silicide As Diffusion Source For Dopant Segregation In 70-Nm Mosfets With Ptsi Schottky-Barrier Source/Drain On Ultrathin-Body Soi

Characterization Of Dopant Segregated Schottky Barrier Source/Drain Contacts

Thermal Stability Enhancement of NiGe Metal Source/Drain and Ge Pmosfets by Dopant Segregation

Numerical study on Schottky-barrier double-gate MOS transistor with recessed channel and asymmetric contact

An Assessment of the Performance for Double Gate Schottky Barrier MOSFETs with Modulated Back Gate

Device simulation study of multilayer MoS 2 Schottky barrier field-effect transistors

Novel Schottky Barrier Mosfet with Dual-Layer Silicide Source/Drain Structure

Investigations on the physical limitation and electrostatic improvement of a gate-all-around silicon nanowire transistor with Schottky barrier source/drain

Impact of Gate Overlap on Performance of Schottky Barrier Metal–Oxide–Semiconductor Field-Effect Transistors Including Gate Induced Barrier Lowering Effect

Monte Carlo simulation of Schottky contact with direct tunnelling model

Schottky Barrier Mosfet Structure with Silicide Source/Drain on Buried Metal

A Comparison Study Of Silicon Nanowire Transistor With Schottky-Barrier Source/Drain And Doped Source/Drain

Role of Si Implantation in Control of Underlap Length in Schottky-barrier Source/drain MOSFETs on Ultrathin Body SOI