Abstract:Molybdenum disulfide (MoS 2 ) is a representative two-dimensional layered transition-metal dichalcogenide semiconductor. Layer-number-dependent electronic properties are attractive in the development of nanomaterial-based electronics for a wide range of applications including sensors, switches, and amplifiers. MoS 2 field-effect transistors (FETs) have been studied as promising future nanoelectronic devices with desirable features of atomic-level thickness and high electrical properties. When a naturally n-doped MoS 2 is contacted with metals, a strong Fermi-level pinning effect adjusts a Schottky barrier and influences its electronic characteristics significantly. In this study, we investigate multilayer MoS 2 Schottky barrier FETs (SBFETs), emphasizing the metal-contact impact on device performance via computational device modeling. We find that p-type MoS2 SBFETs may be built with appropriate metals and gate voltage control. Furthermore, we propose ambipolar multilayer MoS2 SBFETs with asymmetric metal electrodes, which exhibit gate-voltage dependent ambipolar transport behavior through optimizing metal contacts in MoS2 device. Introducing a dual-split gate geometry, the MoS 2 SBFETs can further operate in four distinct configurations: p − p, n − n, p − n, and n − p. Electrical characteristics are calculated, and improved performance of a high rectification ratio can be feasible as an attractive feature for efficient electrical and photonic devices.

A Monte Carlo Study of Ambipolar Schottky Barrier MOSFETs

Monte Carlo Simulation Of 50nm N-Channel Schottky Barrier Tunneling Transistors

Monte Carlo simulation of Schottky contact with direct tunnelling model

On the Effect of Scattering in Schottky Barrier MOSFETs

A Computational Study of Dopant-Segregated Schottky Barrier MOSFETs

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

Study of n-Type Schottky Barrier Tunneling Transistor Characterizations

Monte Carlo Simulation and Macro-Model of Single-Electron Transistor

A Computational Study of Dopant-Segregated

3d Monte Carlo Simulation Of Gate-All-Around Germanium Nmosfet

Self-consistent Simulation of Schottky Barrier SpinFET

Simulation of Spin Transport Properties in Schottky Barrier FET Using Monte Carlo Method

Device simulation study of multilayer MoS 2 Schottky barrier field-effect transistors

Physics-Based Modeling and Validation of 2D Schottky Barrier Field-Effect Transistors

Non-stationary transports in sub-100nm UTB mosfet by using QBE based Monte Carlo method

Investigation Of Rf Performance Of Nano-Scale Ultra-Thin-Body Schottky-Barrier Mosfets Using Monte Carlo Simulation

Simulation of Si and Ge UTB MOSFETs using Monte Carlo method based on the quantum Boltzmann equation

3D Monte Carlo Simulation of gate-All-around germanium nMOSFET with Effective potential Quantum Correction.

Study on Electron Mobility in Nanoscale DG MOSFETs with Symmetric, Asymmetric and Independent Operation Modes

Monte Carlo modeling of spin injection through a Schottky barrier and spin transport in a semiconductor quantum well

Numerical Electron Mobility Model of Nanoscale Symmetric, Asymmetric and Independent Double-Gate Mosfets