Abstract:A 1200V 4H-SiC lateral double-diffused MOSFET (LDMOS) featuring a lightly doped P-top layer at the source side, and a high-doped N-well layer arranged between the channel and P-top layer is proposed. In order to promote the simulation accuracy, Sentaurus Process Tool that can simulate the oxidation, ion implantation, annealing, diffusion, etc. is used for structure establishment in this letter. In the ON-state, the electric potential at the end of the channel can be modulated and lowered due to the existence of P-top layer. The P-top layer can shield the voltage from the drain side, which results in the reduced saturation current ( $text{I}_{text {dsat}}$ ), especially at high drain-source voltage ( $text{V}_{text {DS}}$ ). The introduction of the N-well layer ensures that the P-top layer has almost no impact on the linear current ( $text{I}_{text {dlin}}$ ). Compared with the conventional SiC LDMOS, the $text{I}_{text {dsat}}$ at $text{V}_{text {DS}},,=400text{V}$ of the proposed LDMOS decreases by 24.2% with no degradation in the $text{I}_{text {dlin}}$ and the OFF-state breakdown voltage (BV). Benefiting from the suppressed $text{I}_{text {dsat}}$ , the proposed SiC LDMOS achieves a ON-state BV 366V higher than that of the conventional SiC LDMOS at the gate-source voltage of 20V. Since the short-circuit capability of the SiC power devices is much sensitive to the $text{I}_{text {dsat}}$ -/tex-math>, the 24.2% reduction in $text{I}_{text {dsat}}$ can predict a considerable enhanced short-circuit capability. Simulation results show that the short-circuit withstand time can be improved by 105%.

Numerical study on Schottky-barrier double-gate MOS transistor with recessed channel and asymmetric contact

Performance Analysis of Ultra-thin-Body, Double-Gate pMOSFETs at 5 nm Technology Node

Numerical Study on a Lateral Double-Gate Tunnelling Field Effect Transistor

A planar asymmetric Schottky barrier source/drain structure for nano-scale MOSFETs

Numerical Simulation on Novel Nano-Scale Lateral Double-Gate Tunneling Field Effect Transistor

A Computational Study of Dopant-Segregated Schottky Barrier MOSFETs

Gate-Recessed Normally-OFF GaN MOSHEMT with Improved Channel Mobility and Dynamic Performance Using AlN/Si 3 N 4 As Passivation and Post Gate-Recess Channel Protection Layers

An Assessment of the Performance for Double Gate Schottky Barrier MOSFETs with Modulated Back Gate

4H-Sic Trench Gate Lateral MOSFET with Dual Source Trenches for Improved Performance and Reliability

Simulation of a Novel Schottky Body-Contacted Structure Suppressing Floating Body Effect in Partially-Depleted SOI nMOSFET's

A Comparative Study of Double Gate MOSFET with Asymmetric Barrier Heights at Source/drain and the Symmetric DG-SBFET

4H-Sic Trench Gate Lateral MOSFET with Deep-Shallow Source Trench for Improved RESURF Dose Window and Reduced Oxide Field

Self-depleted T-gate Schottky barrier tunneling FET with low average subthreshold slope and high ION/IOFF by gate configuration and barrier modulation

An Analytical 2D Current Model of Double-Gate Schottky-Barrier MOSFETs

3-D numerical simulation study on 20 nm NMOSFET design

A novel MOSFET structure with asymmetric Schottky and P-N junction source/drain on bulk silicon substrate

Normally-off recessed gate β-Ga 2 O 3 MOSHFETs with a modulation-doped heterostructure back-barrier

Investigation of contact mechanism and gate electrostatic control in multi-channel AlGaN/GaN high electron mobility transistors with deep recessed ohmic contact

Simulation Study of A 1200V 4H-SiC Lateral MOSFET With Reduced Saturation Current

A Computational Study of Dopant-Segregated

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions