Abstract:A novel analytical model of surface potential for a double metal gate schottky barrier tunnelling (SBT) FET using schottky tunnelling with HfO2 as gate dielectric is proposed. The presence of a schottky tunnelling at source-channel interface improves the drain current because of the advanced tunneling from one band-to- another band charge carriers in the area of the interface junctions. Moreover, the existence of the duel work-function- improved the conductivity and thus enhances the tunnelling probability, which increases device performance. The surface potential along the channel the model is examined using the two-dimensional (2-D) Poisson equation with suitable boundary conditions and shows a major part in the design of the shortest distance between source/channel and the drain-source current. Due to its high tunnelling increases on-state current, expressively reduced off-sate current, the proposed device represents one of the reliable model to substitute complementary metal-oxide-semiconductor (CMOS) technology. The results of the analytical model are confirmed against those attained using the silvaco device simulator.

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An Analytical Potential Model of Double-Gate MOSFETs with Schottky Source/Drain

Threshold Voltage Model of a Double-Gate MOSFET with Schottky Source and Drain

Analytical Current Model for Long-Channel Junctionless Double-Gate Mosfets

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A Non-Charge-Sheet Analytic Model for Symmetric Double-Gate MOSFETs With Smooth Transition Between Partially and Fully Depleted Operation Modes

A Carrier-Based Analytic Model for the Undoped Symmetric Double-Gate MOSFETs

An Analytic Model for Channel Potential and Subthreshold Swing of the Symmetric and Asymmetric Double-Gate MOSFETs

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Analysis and Simulation of Schottky Tunneling Using Schottky Barrier FET with 2-D Analytical Modeling

A 2D Analytical Model for SCEs in MOSFETs with High-K Gate Dielectric

An Analytic Model of the Silicon-Based Nanowire Schottky Barrier Mosfet

Analytical Model of the Subthreshold Behavior in Short-Channel Junctionless Cylindrical Surrounding-Gate Mosfets

Improved Analytical Model of Surface Potential with Modified Boundary Conditions for Double Gate Tunnel FETs.

An improved computationally efficient drain current model for double-gate MOSFETs

A rigorous analytical model for short-channel junctionless double-gate MOSFETs

A Current–Voltage Model for Double Schottky Barrier Devices

A Unified Drain Current Model for Nanoscale Double-Gate and Surrounding-Gate MOSFETs Incorporating Velocity Saturation

Analytical Short-Channel Behavior Models of Junctionless Cylindrical Surrounding-Gate Mosfets