Abstract:This paper surveys, reviews, and critiques analytic models of MOSFET short-channel effects (SCEs) in subthreshold published over the past four decades. In the first half of this paper, the published models on SCEs are categorized into the following four main groups based on their approach: 1) charging sharing models; 2) empirical expressions; 3) polynomial potential models; and 4) analytic solutions to 2-D Poisson's equation. The strength and weakness of each approach are elaborated in terms of its physical soundness and predictive ability. A key development was the exponential dependence of SCE on channel length (L) , SCE ~ exp(-L/l0), leading to the introduction of scale length (l0). In the second half of this paper, the predictions of each analytic SCE model are examined by generic 2-D numerical simulations. In particular, the merit of each model is judged by its prediction on the scale length (l0) as a function of the thickness and dielectric constant (κ) of the gate insulator. Only one model, i.e., the generalized scale length model that treated the silicon and insulator regions as two distinct dielectric regions with shared boundary conditions, correctly predicted the MOSFET scale length under all dielectric constant and thickness conditions. A variation of the generalized scale length model applies to recent multiple-gate MOSFETs near the limit of scaling.

A 2D Analytical Model for SCEs in MOSFETs with High-K Gate Dielectric

Threshold Voltage Model for MOSFETs with High-K Gate Dielectrics

Review and Critique of Analytic Models of MOSFET Short-Channel Effects in Subthreshold

An Analytical Potential Model of Double-Gate MOSFETs with Schottky Source/Drain

A Two-Dimensional Analytical Model for Short Channel Junctionless Double-Gate MOSFETs

A rigorous analytical model for short-channel junctionless double-gate MOSFETs

Analytical Short-Channel Behavior Models of Junctionless Cylindrical Surrounding-Gate Mosfets

Analytical Model of the Subthreshold Behavior in Short-Channel Junctionless Cylindrical Surrounding-Gate Mosfets

Threshold Voltage Model of a Double-Gate MOSFET with Schottky Source and Drain

Analysis of SCEs in Nanoscale FinFET with High-K Gate Dielectric

Analytic model for subthreshold channel potential and threshold voltage of the Schottky-barrier surrounding-gate MOSFETS

Modeling of the Influence on Effective $\textit{v}_{\text{th}}$ from Interface States, Short Channel Effects, and Contact Resistance in SiC MOSFETs

An Analytic Model for Channel Potential and Subthreshold Swing of the Symmetric and Asymmetric Double-Gate MOSFETs

Analyzing Short Channel Effects in Deep Submicron MOSFET's Using Variational Method

Analytical Charge Model for MOSFETs with 2-D Quantum Mechanical Effects

Short-Channel-Effect Modeling of Dg-Fets Using Voltage-Doping Transformation Featuring Fd/Pd Modes

Analytical Current Model for Long-Channel Junctionless Double-Gate Mosfets

A Non-Charge-Sheet Analytic Model for Symmetric Double-Gate MOSFETs With Smooth Transition Between Partially and Fully Depleted Operation Modes

Electric Potential and Threshold Voltage Models for Double-Gate Schottky-barrier Source/drain MOSFETs

Analytic subthreshold slope model for deep-submicrometer fully depleted SOI MOSFET's

Two-dimensional analytical model for a non-lightly doped drain SOI MOSFET