Abstract:The Fin shaped Field Effect Transistors (FinFETs), are the front runner of the current sub-nanometer technology node. The semiconductor industry adopts it in high-performance (HP) and low-power (LP) applications due to greater electrostatic control and better scalability. This paper explores the numerically simulation based comparison of bulk and silicon-on-insulator (SOI) technology double gate (DG), triple gate (TG) FinFETs. The essential processing steps required to create the GS high-k dielectric bulk and SOI FinFETs are demonstrated. The electrical performance parameters of the device such as Ion/Ioff ratio, subthreshold swing (SS), and drain induced barrier lowering (DIBL) are extracted. Based on the three-dimensional (3D) ATLASTM simulation results, TG FinFET shows an ameliorated performance over DG in bulk and SOI technology as well. In order to control the short channel effects (SCEs), gate-stack (GS) high-k dielectrics are introduced with fixed thickness interfacial-layer (IL) and high-k dielectric material in between the gate material and semiconductor. The GS high-k dielectrics suppress the SCEs to large extent in both devices and technologies. The GS SOI FinFETs demonstrates the improved performance over the bulk counterpart and TG FinFET is the best among them. Further, the similar kind of investigation has been carried out for Tfin variations. These devices reveal the excellent control of SCEs when the fin is narrow. The ratio of SOI and bulk TG FinFET Ion/Ioff ratio with Tfin variations provide evidence that, the SOI based devices are competent for HP and LP applications.

Analysis of SCEs in Nanoscale FinFET with High-K Gate Dielectric

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A 2D Analytical Model for SCEs in MOSFETs with High-K Gate Dielectric

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

Simulation on the performance comparison for nanoscale SOI and bulk junctionless FinFETs

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Analytical Gate Fringe Capacitance Model for Nanoscale MOSFET with Layout Dependent Effect and Process Variations

Review and Critique of Analytic Models of MOSFET Short-Channel Effects in Subthreshold

Scaling Theory for FinFETs Based on 3-D Effects Investigation

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Performance Enhancement of FinFET Devices with Gate-Stack (GS) High-K Dielectrics for Nanoscale Applications

A Hybrid 3D Quantum Mechanical Simulation of FinFETs and Nanowire Devices

Comprehensive analysis of short-channel effects in ultrathin SOI MOSFETs

Study of 20nm bulk FINFET by using 3D full band Monte Carlo method with Effective Potential Quantum Correction

Modeling of Gate Current and Capacitance in Nanoscale-MOS Structures

A Qusi-3D Model for a FinFET Device Based on the NEGF Method

Design Considerations of High-Κ Gate Dielectrics for Sub-0.1-μm MOSFET's

Simulation and Drain Current Performance analysis of High-K Gate Dielectric FinFET

Analytical Model of Channel Electric Field Profile in Finfet

Nanoscale FinFET Simulation: A Quasi-3D Quantum Mechanical Model Using NEGF

Threshold Voltage Model for MOSFETs with High-K Gate Dielectrics