Abstract:In this paper, we propose a novel Schottky barrier MOSFET structure, in which the silicide source/drain is designed on the buried metal (SSDOM). The source/drain region consists of two layers of silicide materials. Two Schottky barriers are formed between the silicide layers and the silicon channel. In the device design, the top barrier is lower and the bottom is higher. The lower top contact barrier is to provide higher on-state current, and the higher bottom contact barrier to reduce the off-state current. To achieve this, ErSi is proposed for the top silicide and CoSi2 for the bottom in the n-channel case. The 50 nm n-channel SSDOM is thus simulated to analyse the performance of the SSDOM device. In the simulations, the top contact barrier is 0.2e V (for ErSi) and the bottom barrier is 0.6 eV (for CoSi2). Compared with the corresponding conventional Schottky barrier MOSFET structures (CSB), the high on-state current of the SSDOM is maintained, and the off-state current is efficiently reduced. Thus, the high drive ability (1.2 mA/μm at Vds = 1 V, Vgs = 2 V) and the high Ion/Imin ratio (106) are both achieved by applying the SSDOM structure.

Origin of High On-State Current for Dopant-Segregated Schottky MOSFET.

Influence of Channel Length, Thickness, and Crystal Orientation in Ultra-Scaled Double-Gate Pmosfets

A Computational Study of Dopant-Segregated Schottky Barrier MOSFETs

A Computational Study of Dopant-Segregated

High On-State Current P-Type Tunnel Effect Transistor Based on Doping Modulation

Impact Of Gate Misalignment On The Performance Of Dopant-Segregated Schottky Barrier Mosfets

Characterization Of Dopant Segregated Schottky Barrier Source/Drain Contacts

Comparative Study of Tunnel Field Effect Transistors with Dopant-Segregated Schottky Source/Drain

Schottky Barrier Mosfet Structure with Silicide Source/Drain on Buried Metal

Effective Schottky Barrier Lowering in Silicon-on-insulator Schottky-barrier Metal-Oxide-semiconductor Field-Effect Transistors Using Dopant Segregation

A Unified Drain Current Model for Nanoscale Double-Gate and Surrounding-Gate MOSFETs Incorporating Velocity Saturation

Silicide As Diffusion Source For Dopant Segregation In 70-Nm Mosfets With Ptsi Schottky-Barrier Source/Drain On Ultrathin-Body Soi

Quasi-two-dimensional Subthreshold Current Model of Deep Submicrometer SOI Drive-in Gate Controlled Hybrid Transistors with Lateral Non-Uniform Doping Profile.

Effects of Unintended Dopants on I-V Characteristics of the Double-Gate MOSFETs, a Simulation Study

Comparative Study of Dopant-Segregated Schottky Barrier Germanium Nanowire Transistors

A Novel Self-Aligned Dopant-Segregated Schottky Tunnel-FET with Asymmetry Sidewall Based on Standard CMOS Technology

Characteristic Variations Induced by Random Fluctuation of Source/Drain Lateral Distribution Dopant in Nano-Scale UTB SOI MOSFET

A noncharge-sheet channel potential and drain current model for dynamic-depletion silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Charge-Based Model for Symmetric Double-Gate Mosfets with Inclusion of Channel Doping Effect

Temperature Dependent Characteristics of GaSb P-Channel MOSFETs with Si-implanted Source and Drain

Electric Potential and Threshold Voltage Models for Double-Gate Schottky-barrier Source/drain MOSFETs