Abstract:A comprehensive variation extraction flow is proposed to separate different random variation sources in FinFET technology. Based on the understanding of the impacts of random dopant fluctuation (RDF), metal gate granularity (MGG), and line edge roughness (LER) on device figures of merit: threshold voltage (V th ) and subthreshold swing (SS), the LER component induced V th variation can be extracted using covariance matrix of SS and V th . The RDF and MGG can be separated from IV curves of FinFETs with different doping concentration. Results decomposed from the overall flow show great agreement with TCAD simulations. The proposed flow can achieve the accurate extraction of the three major variation sources in FinFET technology. Furthermore, the extendibility of the proposed method to understand the physical mechanisms of random variations is exhibited.

Characteristic Variations Induced by Random Fluctuation of Source/Drain Lateral Distribution Dopant in Nano-Scale UTB SOI MOSFET

RDF Effect Induced by Source/drain Doping in Nano-Scale UTB SOI MOSFET with Nominally Un-Doped Channel

Variability in nano-scale intrinsic silicon-on-thin-box MOSFETs (SOTB MOSFETs)

Impact of random discrete dopant in extension induced fluctuation in gate–source/drain underlap FinFET

Numerical Study on Effects of Random Dopant Fluctuation in Double Gate Tunneling FET

Source/Drain Series Resistances of Nanoscale Ultra-Thin-Body Soi Mosfets with Undoped or Very-Low-Doped Channel Regions

Study of the Impact of RDF on n-Type SOI Nanowire FET via Quantum-Corrected Monte Carlo Device Simulations

Impact of Random Dopant Fluctuation Effect on Surrounding Gate MOSFETs: from Atomic Level Simulation to Circuit Performance Evaluation.

Electrical characteristic fluctuation of 16-nm-gate trapezoidal bulk FinFET devices with fixed top-fin width induced by random discrete dopants

Numerical study on effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM performance

Impacts of diameter-dependent annealing on S/D extension random dopant fluctuations in silicon nanowire MOSFETs

Variability Induced by Line Edge Roughness in Double-Gate Dopant-Segregated Schottky MOSFETs

Impact of Junction Nonabruptness on Random-Discrete-Dopant Induced Variability in Intrinsic Channel Trigate Metal–Oxide–Semiconductor Field-Effect Transistors

Experimental investigation and design optimization guidelines of characteristic variability in silicon nanowire CMOS technology

Scaling of lowered source/drain (LSD) and raised source/drain (RSD) ultra-thin body (UTB) SOI MOSFETs

A Device-Level Characterization Approach to Quantify the Impacts of Different Random Variation Sources in FinFET Technology

Process optimization for random threshold voltage variation reduction in nanoscale MOSFET by 3D simulation

Impacts of Short-Channel Effects on the Random Threshold Voltage Variation in Nanoscale Transistors

A Comprehensive Extraction Method to Decompose Different Random Variation Impacts in bulk FinFET Technology

Source/Drain Resistance of Utb Soi Mosfet

A Computational Study of Dopant-Segregated Schottky Barrier MOSFETs