Abstract:The temperature dependence of threshold voltage (V-T) and drain-induced barrier lowering (DIBL) characteristics for MOS transistors fabricated with three different threshold voltage technologies are studied. We found that the technique employed to adjust the V-T value make the devices to be not well-scaled for short-channel effects for ultra-short devices at low temperatures. For devices with a short gate length (L<90 nm) and being fabricated using the low threshold voltage (low-V-T) technology, both the temperature dependencies of threshold voltage and DIBL are different to the standard-V-T and high-V-T ones. Abnormally large values of DIBL were found for low V-T-devices because of the significant encroachment of drain depletion region on the channel region. On the other hand, the high substrate doping in high-V-T process makes the devices to have a larger junction depth than that used in the standard process. It causes a poorer DIBL for short-channel devices. Hence the best scaling or design of the devices at room temperature does not imply that they should also be good at low temperatures, especially for L = 60 nm fabricated using the low-V-T process. Different device design and process optimization are required for devices to be operated at temperatures beyond the nominal range. (C) 2013 Elsevier Ltd. All rights reserved.

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