Abstract:In this paper, the novel Quasi-SOI CMOS architecture is fabricated based on bulk Si substrate for the first time. The whole fabrication is basically compatible with the conventional CMOS technology. The path of the draininduced barrier lowering (DIBL) effect can be effectively suppressed by the "L-Type" insulator surrounding the source and drain in Quasi-SOI MOSFET. Such device structure can effectively suppress the short-channel effects (SCEs) and prevent the transistor from the bulk punch-through. The leakage current will not increase with the high doping concentration of the substrate due to the absence of P/N junctions surrounding the S/D regions which brings more flexibility on the modulation of the threshold voltage. Moreover, the influence of process-induced variations on the new transistor performance and implications for manufacturing processes comparing with UTB SOI MOSFET are also studied by simulations in order to investigate the sensitivity of the important characteristics to the device crucial physical parameter fluctuations introduced by the process. The results show that Quasi-SOI MOSFET can be more tolerant of process-induced variation for the deep nanometer scale regime. The highly manufacturable Quasi-SOI MOSFET which can combine the advantages of ultra-thin body (UTB) SOI MOSFET and bulk silicon device can be considered as a promising candidate for highly scaled devices.

RDF Effect Induced by Source/drain Doping in Nano-Scale UTB SOI MOSFET with Nominally Un-Doped Channel

Characteristic Variations Induced by Random Fluctuation of Source/Drain Lateral Distribution Dopant in Nano-Scale UTB SOI MOSFET

Source/Drain Series Resistances of Nanoscale Ultra-Thin-Body Soi Mosfets with Undoped or Very-Low-Doped Channel Regions

Scaling of lowered source/drain (LSD) and raised source/drain (RSD) ultra-thin body (UTB) SOI MOSFETs

Impact of random discrete dopant in extension induced fluctuation in gate–source/drain underlap FinFET

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

Study of the Impact of RDF on n-Type SOI Nanowire FET via Quantum-Corrected Monte Carlo Device Simulations

Scalability and Parasitic Effect of Utb Soi Mosfets with Raised S/D and Sunk S/D

Variability in nano-scale intrinsic silicon-on-thin-box MOSFETs (SOTB MOSFETs)

Numerical Study on Effects of Random Dopant Fluctuation in Double Gate Tunneling FET

Source/Drain Resistance of Utb Soi Mosfet

Recessed source/drain for scaling SOI MOSFET to the limit

Impacts of diameter-dependent annealing on S/D extension random dopant fluctuations in silicon nanowire MOSFETs

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

Recessed Source/Drain for Sub-50 Nm Utb Soi Mosfet

Characterization Of Dopant Segregated Schottky Barrier Source/Drain Contacts

Experimental investigation of Quasi-SOI MOSFET for highly scaled devices

Numerical study on effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM performance

Impact of Random Dopant Fluctuation Effect on Surrounding Gate MOSFETs: from Atomic Level Simulation to Circuit Performance Evaluation.

Effects of Unintended Dopants on I-V Characteristics of the Double-Gate MOSFETs, a Simulation Study

Short-Channel-Effect Modeling of Dg-Fets Using Voltage-Doping Transformation Featuring Fd/Pd Modes