Variability Induced by Line Edge Roughness in Double-Gate Dopant-Segregated Schottky MOSFETs

Yunxiang Yang,Shimeng Yu,Lang Zeng,Gang Du,Jinfeng Kang,Yuning Zhao,Ruqi Han,Xiaoyan Liu

DOI: https://doi.org/10.1109/tnano.2009.2037222

2009-01-01

IEEE Transactions on Nanotechnology

Abstract:Intrinsic parameter fluctuations introduced by process variations, such as line edge roughness (LER), create an increasing challenge to the CMOS technology scaling. In this paper, variations in double-gate dopant-segregate Schottky (DSS) MOSFETs, caused by LER of silicon-fin, are systematically investigated using statistical technology computer-aided design simulations. The impact of LER on both Schottky barrier and DSS-MOSFETs are examined contrastively. The results show that DSS-MOSFETs offer a larger and more uniform drive current, but suffer a more serious Vt fluctuation. The cause of such larger Vt flutuation is also analyzed, thus providing a good starting point to propose way to solve this problem.