Impact of Gate–Source/Drain Underlap on the Performance of Monolayer SiC Schottky-Barrier Field-Effect Transistor
Hai-Qing Xie,Jie-Ying Li,Gang Liu,Xi-Ya Cai,Zhi-Qiang Fan
DOI: https://doi.org/10.1109/ted.2020.3017187
IF: 3.1
2020-10-01
IEEE Transactions on Electron Devices
Abstract:Schottky-barrier field-effect transistors (SBF-ETs) based on 2-D semiconductors had been investigated as a substitute for a conventional metal–oxide–semiconductor field-effect transistor (MOSFET) based on bulk silicon in the field of high-performance (HP) device. Especially, the monolayer SiC has been studied because it has a large band gap, which results in reducing the short-channel effect. In this article, the gate–source/drain underlap-dependent characteristics of HP SBFETs based on monolayer SiC with 5.1- and 4.6-nm gate lengths are investigated through ab initio simulations. The performances of the 5.1-nm monolayer SiC SBFET are degraded by the gate–source/drain underlap. The gate–source/drain underlap, however, shows the different improved performances for the 4.6-nm monolayer SiC SBFET. The gate–source underlap could enhance the ON-current to $2792~mu text{A}/mu text{m}$ and the gate–drain underlap can enhance the ON-current to $1754~mu text{A}/mu text{m}$ , which all far exceed the International Technology Roadmap for Semiconductors (ITRS) requirement.
engineering, electrical & electronic,physics, applied