Abstract:This paper analyzes the sub-10 nm ultra-scaled Si1−xGex fin field-effect transistor (FinFET) and gate-all-around transistor (GAAFET), based on an improved method by combining Slater partial occupation and ab initio density functional theory (DFT). Compared to the existing generalized gradient approximation (GGA) DFT, which is computationally efficient but inaccurate, and the established hybrid functional DFT, which is accurate but computationally demanding, the proposed method achieves both hybrid functional-like high accuracy and GGA-like high computational efficiency concurrently. By using this improved methodology, batch simulations are performed to investigate the size- and composition-dependent quantum confinement and band structure effects in the Si1−xGex FinFET and GAAFET. It is shown that the quantum confinement in ultra-scaled FinFET and GAAFET significantly increases the bandgap of Si1−xGex channel in the sub-10 nm scale. It is quantitatively demonstrated that, due to its two-dimensional quantum confinement, the ultra-scaled GAAFET has larger confinement-induced bandgap increase, lower direct source-drain quantum tunneling, lower off-state transmission and low-bias conductance, and smaller drain-induced barrier lowering, compared to the FinFET which is confined only in one-dimension. These differences jointly indicate that the ultra-scaled GAAFET could offer better device performance than the ultra-scaled FinFET. It is quantitatively shown that, by reducing the Ge composition of the Si1−xGex channel in ultra-scaled FinFET and GAAFET, the bandgap and the threshold gate voltage can be significantly increased; and the transmission coefficients, the low-bias conductance, and the source-drain current can be significantly reduced. These trends can be utilized to optimize device performance by tuning Ge composition in different technology nodes.

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Three-Dimensional Monte Carlo Simulation of Bulk Fin Field Effect Transistor

Influence of Channel Length, Thickness, and Crystal Orientation in Ultra-Scaled Double-Gate Pmosfets

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Simulation Study of Device Physics Issues in III&#x2013;V MOSFETs at 10 Nm Node

Impact Of Gate Misalignment On The Performance Of Dopant-Segregated Schottky Barrier Mosfets

Study of 20nm bulk FINFET by using 3D full band Monte Carlo method with Effective Potential Quantum Correction

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3-D Simulation of Geometrical Variations Impact on Nanoscale FinFETs

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

Multiphysics Simulation Study of Thermal Stress Effects in Nanoscale FinFETs Heterogeneously Integrated with GaN High-Power Device on Silicon Substrate

Computation of Direct Tunneling gate leakage currents in nano-MOSFETs using ensemble Full Band Monte Carlo with quantum correction

3D Monte Carlo Simulation of gate-All-around germanium nMOSFET with Effective potential Quantum Correction.

3d Monte Carlo Simulation Of Gate-All-Around Germanium Nmosfet

Impact of random discrete dopant in extension induced fluctuation in gate–source/drain underlap FinFET

Impact of source/drain lateral straggle on GIDL current of low SS NC-FinFET

Impact of crystal orientation and surface scattering on DG-MOSFETs in quasi-ballistic region

Full 3-D simulation of gate line edge roughness impact on sub-30nm FinFETs

The Influence of Gate Line Edge Roughness and Thickness of Silicon Film on the Performance of UTBB MOSFETs

Simulation on the performance comparison for nanoscale SOI and bulk junctionless FinFETs

Efficient ab initio analysis of quantum confinement and band structure effects in ultra-scaled Si1−xGex gate-all-around and fin field-effect transistors for sub-10 nm technology nodes