Abstract:Heterogeneous integration enables high-density integration to improve system functionality, but meanwhile brings reliability concerns due to the intensification of temperature and thermal stress. However, research on thermal stress effects in nanoscale transistors within heterogeneous integrated circuit is still very limited up to now. Multiphysics computation for the heterogeneous integration of nanoscale p-FinFET with GaN high electron mobility transistor (HEMT) on silicon substrate is performed. Firstly, self-heating of GaN HEMT induced thermal stress is simulated. Then, thermal stress effects induced by the GaN HEMT on quantum transport in the FinFET at different locations are compared and analyzed, including the hole effective mass, hole average velocity, on/off-state current, and on-off ratio. Moreover, the impacts of crystal orientation configurations are further discussed. Simulation results show that the impact of thermal stress on FinFET is highly dependent on the Si crystal orientation and its location relative to GaN HEMT. Taking the FinFET with (001)/[110] confinement/transport orientation, which is at a distance of R FET and an angle of φ from the GaN HEMT as an example, thermal stress induces the significant reductions in I on and I off of FinFET at φ = π/2 and φ = 3π/2, and the increases of I on and I off in FinFET at φ = 0 and φ = π, but has small impact on FinFETs located diagonally to the GaN HEMT.

3-D Simulation of Geometrical Variations Impact on Nanoscale FinFETs

Full 3-D simulation of gate line edge roughness impact on sub-30nm FinFETs

Impacts of gate line edge roughness on sub 100nm MOSFETs

A New Method to Fin-width Line Edge Roughness Effect of FinFET Performance

Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs

A novel approach to simulate Fin-width Line Edge Roughness effect of FinFET performance

The impact of line edge roughness on the stability of a FinFET SRAM

Three-Dimensional Statistical Simulation of Gate Leakage Fluctuations Due to Combined Interface Roughness and Random Dopants

Variability Induced by Line Edge Roughness in Double-Gate Dopant-Segregated Schottky MOSFETs

Multiphysics Simulation Study of Thermal Stress Effects in Nanoscale FinFETs Heterogeneously Integrated with GaN High-Power Device on Silicon Substrate

Simulation of line-edge roughness effects in silicon nanowire MOSFETs

Influence of Gate-Source/Drain Misalignment on the Performance of Bulk Finfets by A 3d Full Band Monte Carlo Simulation

Impact of random discrete dopant in extension induced fluctuation in gate–source/drain underlap FinFET

A Device-Level Characterization Approach to Quantify the Impacts of Different Random Variation Sources in FinFET Technology

Line-edge Roughness Induced Single Event Transient Variation in SOI FinFETs

Investigation on the effective immunity to process induced line-edge roughness in silicon nanowire MOSFETs

Three-Dimensional Monte Carlo Simulation of Bulk Fin Field Effect Transistor

Impact of stochastic mismatch on FinFETs SRAM cell induced by process variation

Variability in nano-scale intrinsic silicon-on-thin-box MOSFETs (SOTB MOSFETs)

Study of 20nm bulk FINFET by using 3D full band Monte Carlo method with Effective Potential Quantum Correction

Nanoscale FinFET Simulation: A Quasi-3D Quantum Mechanical Model Using NEGF