Abstract:Roughness cannot be ignored as feature sizes shrink with Moore's Law, since it has potential to influence the device's performance. The roughness is usually described by line edge roughness (LER) and line width roughness (LWR). LER is the deviation of a feature edge from its ideal shape and is defined as three times the standard deviation, the deviation from the average line width is defined as LWR. For a certain critical dimension (CD) and pitch, there are many factors that can contribute to the roughness in the lithography process, such as source, mask optimizations, photoresist types and its processing, etc. An in-depth insight of the roughness formation mechanisms is essential to improve LER. This study employs photoresist process simulation to analyze LER, offering an efficient alternative to silicon data collection. Simulation analysis is carried out to examine the key factors influencing LER, including quencher concentration, photoacid diffusion length, PEB temperature. Concurrently, the study also delves into the impact of photoresist resin molecular composition and the development process on roughness. By using simulation to understand and predict roughness, the research provides insights into optimizing lithography parameters, thereby improving process stability and minimizing roughness formation.

A novel approach to simulate Fin-width Line Edge Roughness effect of FinFET performance

A New Method to Fin-width Line Edge Roughness Effect of FinFET Performance

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3-D Simulation of Geometrical Variations Impact on Nanoscale FinFETs

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Line-Edge Roughness from Extreme Ultraviolet Lithography to Fin-Field-Effect-Transistor: Computational Study

Impacts of gate line edge roughness on sub 100nm MOSFETs

Simulation of line-edge roughness effects in silicon nanowire MOSFETs

Electrothermal characterization of SOI FinFETs

Triple-Gate Fin Field Effect Transistors with Fin-Thickness Optimization to Reduce the Impact of Fin Line Edge Roughness

Three-Dimensional Monte Carlo Simulation of Bulk Fin Field Effect Transistor

Simulation of Correlated Line-Edge Roughness in Multi-Gate Devices

Analysis of Linewidth Uniformity and Line Edge/Width Roughness in a 5 Nm Logic SAQP Process

The Influence of Gate Line Edge Roughness and Thickness of Silicon Film on the Performance of UTBB MOSFETs

An Optimized FinFET Channel with Improved Line-Edge Roughness and Linewidth Roughness Using the Hydrogen Thermal Treatment Technology

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Effects of Gate Metal Work Function and Line Edge Roughness on the Variability of Junctionless Field-Effect Transistor

Photoresist Process Simulation to Study Line Edge Roughness

Influence of Gate-Source/Drain Misalignment on the Performance of Bulk Finfets by A 3d Full Band Monte Carlo Simulation

Investigation on the effective immunity to process induced line-edge roughness in silicon nanowire MOSFETs