Abstract:In this paper, we present a comparative study on the impact of work function variations (WFV) between the III-V heterojunction and homojunction tunnel field-effect transistors (TFETs) vis TCAD simulation. It reveals that, in general, the current variation of both devices decrease as the gate voltage increases, and the threshold voltage variations generally increase with the increase of threshold current. However, in comparison to homojunction TFET, heterojunction TFET exhibits the following two differences. 1) The current fluctuation is stronger near the device's OFF-state and weaker near the ON-state, and thus it has a stronger dependence on bias. 2) Both the threshold voltage fluctuations and its dependence on the threshold current are weaker. On the other hand, with an increase in grain size, both homojunction and heterojunction devices manifest more prominent performance fluctuations. Moreover, the dependence of these fluctuations on grain size is roughly comparable for these two device types. Finally, it is observed that 1) the significant current fluctuation at the OFF-state can be mitigated when the device's OFF-state is designed within a region with weaker gate control, and 2) the current normalized coefficient of variation parameter may be unreliable to assess the fluctuation for the case with a few "abnormal" high current values.

Effects of Gate Metal Work Function and Line Edge Roughness on the Variability of Junctionless Field-Effect Transistor

Effects of Gate Metal and Channel Shape on the Variability of Junctionless Field-Effect Transistor

Study of Work-Function Variation Effects in Multigate Tunneling Field Effect Transistors

Impact of channel line-edge roughness on junctionless FinFET

Impacts of gate line edge roughness on sub 100nm MOSFETs

A comparative study of work function variations in III-V heterojunction and homojunction tunnel field-effect transistors

Dipole-induced Modulation of Effective Work Function of Metal Gate in Junctionless FETs

Impact of Work-Function Variation in Ferroelectric Field-Effect Transistor

Simulation Study of Intrinsic Parameter Fluctuations in Variable-Body-Factor Silicon-On-Thin-Box Metal Oxide Semiconductor Field Effect Transistors

Variability induced by Line edge roughness in silicon on thin box (SOTB) MOSFETs

Analysis of Metal Work-Function Modulation Effect in Reconfigurable Field-Effect Transistor

A novel approach to simulate Fin-width Line Edge Roughness effect of FinFET performance

A New Method to Fin-width Line Edge Roughness Effect of FinFET Performance

The Influence of Gate Line Edge Roughness and Thickness of Silicon Film on the Performance of UTBB MOSFETs

Suppression of Statistical Variability in Junctionless FinFET Using Accumulation-Mode and Charge Plasma Structure

Impact of Process Variation on Nanosheet Gate-All-Around Complementary FET (CFET)

Quantum simulation investigation of work-function variation in nanowire tunnel FETs

Impact of the Figures of Merit (foms) Definitions on the Variability in Nanowire TFET: NEGF Simulation Study

Variation Investigation of Junction-less Transistor with Side-wall Charge-plasma Structure Induced by Line Edge Roughness

Variability Induced by Line Edge Roughness in Double-Gate Dopant-Segregated Schottky MOSFETs

Impact of Line-Edge Roughness on Double-Gate Schottky-Barrier Field-Effect Transistors