Abstract:Enhancing the mobility in metal-oxide-semiconductor field-effect transistors (MOSFETs) with narrow channel widths is highly sensitive to the stress effects of Si channel when related advanced strain engineering is introduced and is compatible with semiconductor processes. In practice, layouts have significant effect on the device performance, especially for the protruding gate width on shallow trench isolation structures. The geometric parameter is investigated by systematically analysing an n-channel MOSFET composed of silicon-carbon (SiC) stressors embedded in the source and drain (S/D) regions and a tensile contact etch stop layer (CESL) using three-dimensional finite element simulation. Tensile CESL (1.1 GPa) and a SiC S/D stressor with a carbon mole fraction of 1.65% are loaded on the structure. The difference in the interactive percentages between the mechanical bending effect of the CESL from the top of the poly gate and the downward force of the CESL adjacent to the spacer sidewall of the gate occurs when the protruding gate width is increased. Results indicate that mobility was highly enhanced by approximately 72.5% at a width of approximately 0.2 μm. The mechanical bending effect becomes dominant when the gate width is more than 0.2 μm. Consequently, the mobility gain decays and consequently converges toward a constant.

Simulation Study of Intrinsic Parameter Fluctuations in Variable-Body-Factor Silicon-On-Thin-Box Metal Oxide Semiconductor Field Effect Transistors

Variability in nano-scale intrinsic silicon-on-thin-box MOSFETs (SOTB MOSFETs)

Simulation Study of Device Physics Issues in III&#x2013;V MOSFETs at 10 Nm Node

Variability induced by Line edge roughness in silicon on thin box (SOTB) MOSFETs

Strain Optimization in Silicon P-Type Double-Gate MOSFET at 7nm Channel Length

Variability Induced by Line Edge Roughness in Double-Gate Dopant-Segregated Schottky MOSFETs

Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs

Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body in 0.53 Ga 0.47 As-on-Insulator N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

PBTI and HCI Degradations of Ultrathin Body InGaAs-On-Insulator Nmosfets Fabricated by Wafer Bonding

Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance

Three-Dimensional Statistical Simulation of Gate Leakage Fluctuations Due to Combined Interface Roughness and Random Dopants

Effects of Gate Metal Work Function and Line Edge Roughness on the Variability of Junctionless Field-Effect Transistor

Comprehensive Stress Effect of Thin Coatings and Silicon-Carbon Lattice Mismatch on Nano-Scaled Transistors with Protruding Poly Gate

Experimental investigation and design optimization guidelines of characteristic variability in silicon nanowire CMOS technology

Impact of Process Fluctuations on Reconfigurable Silicon Nanowire Transistor

Evaluation of statistical variability in 32 and 22 nm technology generation LSTP MOSFETs

3-D Simulation of Geometrical Variations Impact on Nanoscale FinFETs

Impacts of gate line edge roughness on sub 100nm MOSFETs

Variability In Soi Schottky Barrier Mosfets

Study of Work-Function Variation on Performance of Dual-Metal Gate Fin Field-Effect Transistor.

The Influence of Gate Line Edge Roughness and Thickness of Silicon Film on the Performance of UTBB MOSFETs