Abstract:In this work, quantum ballistic transport study of a Si double-gate pMOSFET has been carried out in an ultra-thin structure. The simulation is performed by using non-equilibrium Green's function (NEGF) solver that incorporates six band k . p model. Based on this framework, we analyze the device characteristics for a channel length of 5 nm considering different transport directions, confinement directions and channel thickness. In the on and off state of the device several physical parameters are necessary for performance analysis including threshold voltage, subthreshold slope, on/off current ratio. Our results confirm that for 5nm gate length, best electrical performance is obtained at (001)/[100] crystal orientation. It is observed that better ON current, subthreshold swing and lower value of tunneling ratio can be achieved by optimizing the channel thicknesses and selecting the proper crystallographic orientation for the device. The I-ON/I-OFF ratio is also calculated for both high performance and low operating power applications. We find that large channel thickness leads to worse sub-threshold slope due to the stronger source-to-drain tunneling caused by electrostatics degradation. The potential barrier and spectral current density are also presented in order to find the source-to-drain tunneling and ratio for different crystal orientations and body thickness.

Study of Work-Function Variation on Performance of Dual-Metal Gate Fin Field-Effect Transistor.

Study of Work-Function Variation Effects in Multigate Tunneling Field Effect Transistors

Impact of Work-Function Variation in Ferroelectric Field-Effect Transistor

Impact of Hot Carrier Degradation and Bias Temperature Instability on GHz Cycle-to-Cycle Variation in Ultra-Scaled FinFETs

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Effects of Gate Metal Work Function and Line Edge Roughness on the Variability of Junctionless Field-Effect Transistor

Performance Analysis of Ultra-thin-Body, Double-Gate pMOSFETs at 5 nm Technology Node

A comparative study of work function variations in III-V heterojunction and homojunction tunnel field-effect transistors

Quantum simulation investigation of work-function variation in nanowire tunnel FETs

Impact of Process Variation on Nanosheet Gate-All-Around Complementary FET (CFET)

Influence of gate work function variations on characteristics of fin-shaped silicon quantum dot device with multi-gate under existence of gate electrostatic coupling

Analysis of Metal Work-Function Modulation Effect in Reconfigurable Field-Effect Transistor

Investigation on Variability in Metal-Gate Si Nanowire Mosfets: Analysis of Variation Sources and Experimental Characterization

Simulation Study of Intrinsic Parameter Fluctuations in Variable-Body-Factor Silicon-On-Thin-Box Metal Oxide Semiconductor Field Effect Transistors

Numerical Study On Dual Material Gate Nanowire Tunnel Field-Effect Transistor

Multiple Workfunction High Performance FinFETs for Ultra-low Voltage Operation

The impact of device parameter variation on double gate tunneling FET and double gate MOSFET

Simulation Study of Metal-gate Work-function Optimization and the Impact on Device Performance in 32 nm Gate-last Process

The performance measure of GS-DG MOSFET: an impact of metal gate work function

Variability in nano-scale intrinsic silicon-on-thin-box MOSFETs (SOTB MOSFETs)

Effects of Gate Metal and Channel Shape on the Variability of Junctionless Field-Effect Transistor