Abstract:The nanosheet Field Effect Transistors (FETs) are the promising device architecture for sub - 5 n m technology node as per the International Roadmap for Devices and Systems (IRDS) 2020 and has attracted the semiconductor industry as the key device architecture for upcoming low power to high performance applications. To contribute to the growth of this continuously evolving technology, the impact of key device design parameter namely gate length ( L g ) and process parameters namely source/drain (S/D) doping ( N S D ) and channel doping ( N C H ) on the DC and analog/RF performance of gate-stack based Si gate-all-around (GAA) stacked nanosheet FETs have been explored. Simulation result shows that as we downscale the L g from 30 n m to 10 n m , the short channel effects (SCEs) deteriorates the device performance significantly by reducing the threshold voltage ( V t h ) thereby increasing the OFF-current ( I o f f ) by 4 orders and degrading the sub-threshold swing (SS) and drain induced barrier lowering (DIBL). However, the ON-current ( I o n ), ON-current to OFF-current ratio ( I o n / I o f f ), intrinsic delay and analog/RF performance improves at shorter L g . Higher N S D results in improved driving capability and analog performance of the device. However, I o f f , I o n / I o f f ratio, SS and DIBL degrades with higher N S D . Higher channel doping poses a solution to circumvent the SCEs in aggressively scaled devices, however, it causes scattering thereby reducing the mobility of the carriers. So, the doping should be chosen wisely to get the desired V t h and other performance parameters.

Impact of Process Variation on Nanosheet Gate-All-Around Complementary FET (CFET)

Compact Modeling of Process Variations in Nanosheet Complementary FET (CFET) and Circuit Performance Predictions

Statistical Device Simulation and Machine Learning of Process Variation Effects of Vertically Stacked Gate-All-Around Si Nanosheet CFETs

Impact of Process Fluctuations on RF Small-Signal Parameter of Gate-All-Around Nanosheet Transistor Beyond 3 Nm Node

Experimental investigation and design optimization guidelines of characteristic variability in silicon nanowire CMOS technology

Investigation on Variability in Metal-Gate Si Nanowire Mosfets: Analysis of Variation Sources and Experimental Characterization

Impact of Process Fluctuations on Reconfigurable Silicon Nanowire Transistor

Variability in nano-scale intrinsic silicon-on-thin-box MOSFETs (SOTB MOSFETs)

Impact of Process Variability on Threshold Voltage in Vertically-Stacked Nanosheet TFET

Design technique co-optimization approach to GAA FETs for inverter design at advanced technology node

Impact of Random Dipole Fluctuation-Induced Variation on Nanosheet Devices

Investigation of process variation in vertically stacked gate-all-around nanowire transistor and SRAM circuit

Statistical Variability Analysis In Vertically Stacked Gate All Around Fets At 7 Nm Technology

Impact of the Figures of Merit (foms) Definitions on the Variability in Nanowire TFET: NEGF Simulation Study

Variability investigation of gate-all-around silicon nanowire transistors from top-down approach

Quantum simulation investigation of work-function variation in nanowire tunnel FETs

Impact of Gate Length and Doping Variation on the DC and Analog/RF Performance of sub - 3nm Stacked Si Gate-All-Around Nanosheet FET

Study of Work-Function Variation on Performance of Dual-Metal Gate Fin Field-Effect Transistor.

3-D Simulation of Geometrical Variations Impact on Nanoscale FinFETs

Extraction of Process Variation Parameters in FinFET Technology Based on Compact Modeling and Characterization

Impacts of Diameter and Ge Content Variation on the Performance of Si1-xGex P-Channel Gate-All-Around Nanowire Transistors